The barrier-layer model previously proposed to explain the anomalous increase in resistivity that occurs in doped BaTiOs has been reexamined in the light of data obtained from more recent experiments. The picture thus obtained describes correctly and quantitatively the resistivity anomaly and the frequency and voltage dependence of t h e resistivity in the entire temperature range investigated (-180" to +200°C). The activation energy of the donors and of t h e surface states as well as the density of states in BaTi03 were determined and are in close agreement with other investigations. Comments are made regarding t h e uncertainty of the nature of the surface states.
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