Semiconducting barium titanate

Heywang, Walter

doi:10.1007/bf00550094

Cited by 389 publications

(136 citation statements)

References 21 publications

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“…This might be related to the high dipole polarisation of rareearth based-Nd, microstructure and grain size of the sample. The permittivity reaches a peak at the Curie point and falls of at higher temperatures in accordance with the Curie-Weiss law [8]. This phenomena were strongly related with the shifting of maximum permittivity at Tc of Nd-Doped BaTiO3 at tetragonal phase to cubic phase above Tc.…”

Section: +supporting

confidence: 56%

Structural and electrical properties of Barium Titanate (BaTiO3) and Neodymium doped BaTiO₃ (Ba_0.995Nd_0.005TiO₃)

et al. 2017

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Abstract. Barium titanate (BaTiO3) and Neodymium (Nd) doped BaTiO3 with composition Ba0.995Nd0.005TiO3 were prepared using conventional solid state reaction method to study the dielectric properties of materials. Pure phase samples were found at final heating temperature of 1400 ᵒC for overnight. X-ray diffraction analysis reveals the changes in the lattice parameter and unit cell volume of the pure perovskite tetragonal structure with space group (P4mm). Electrical analysis is carried out to investigate the dielectric properties, conductivity behaviour and dielectric loss of BaTiO3 and Ba0.995Nd0.005TiO3. Ba0.995Nd0.005TiO3 have a broaden dielectric peaks with high permittivity of 8000 and reasonably low loss tan δ which is about 0.004 (1 kHz).

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Section: +supporting

confidence: 56%

Structural and electrical properties of Barium Titanate (BaTiO3) and Neodymium doped BaTiO₃ (Ba_0.995Nd_0.005TiO₃)

et al. 2017

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“…17-50 • C (see figure 2, range I) and ca. 300-500 • C (see figure 2, range III) is described by the equations [1,12]:…”

Section: Resultsmentioning

confidence: 99%

The Effect of Isovalent Substitutions and Dopants of 3d-Metals on the Properties of Ferroelectrics- Semiconductors

V’yunov¹,

Kovalenko²,

Belous³

2003

Condens. Matter Phys.

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Electrophysical properties and microstructure of PTCR ceramics of the system (Ba,Ca,Sr,Y)TiO 3 + y%Mn have been investigated. It has been shown that manganese ions increase the potential barrier at grain boundaries and form a high-resistance outer layer in (Ba,Ca,Sr,Y)TiO 3 ceramics. The resistance of grains, outer layers and grain boundaries, the values of temperature coefficient of resistance as well as the varistor effect as a function of manganese content of PTCR materials have been investigated.

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“…The grain boundaries prevent free charge carriers to move between the grains, which results in high resistance. Heywang [1] describes the PTC behavior in terms of the enhanced height of the potential energy barrier with temperature, arising from the twodimension layer of electron traps at grain boundaries. As an explanation for the resulting volume conductivity, a hopping model was proposed by Saburi [2], whereas Gerthsen et al [3] have presented a polaron charge carrier transport.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Noise and Non-Linearity of I-V Characteristics of Positive Temperature Coefficient Chip Thermistors

Sita¹,

Sedláková²,

Majzner³

et al. 2013

Metrology and Measurement Systems

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Noise spectroscopy and I-V characteristic non-linearity measurement were applied as diagnostic tools in order to characterize the volume and contact quality of positive temperature coefficient (PTC) chip sensors and to predict possible contact failure. Correctly made and stable contacts are crucial for proper sensing. I-V characteristics and time dependences of resistance were measured for studied sensors and, besides the samples with stable resistance value, spike type resistance fluctuation was observed for some samples. These spikes often disappear after about 24 hours of voltage application. Linear I-V characteristics were measured for the samples with stable resistance. The resistance fluctuation of burst noise type was observed for some samples showing the I-V characteristic dependent on the electric field orientation. We have found that the thermistors with high quality contacts had a linear I-V characteristic, the noise spectral density is of 1/f type and the third harmonic index is lower than 60 dB. The samples with poor quality contacts show non-linear I-V characteristics and excess noise is given by superposition of g-r and 1/f n type noises, and the third harmonic index is higher than 60 dB.

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Semiconducting barium titanate

Cited by 389 publications

References 21 publications

Structural and electrical properties of Barium Titanate (BaTiO3) and Neodymium doped BaTiO₃ (Ba_0.995Nd_0.005TiO₃)

Structural and electrical properties of Barium Titanate (BaTiO3) and Neodymium doped BaTiO₃ (Ba_0.995Nd_0.005TiO₃)

The Effect of Isovalent Substitutions and Dopants of 3d-Metals on the Properties of Ferroelectrics- Semiconductors

Analysis of Noise and Non-Linearity of I-V Characteristics of Positive Temperature Coefficient Chip Thermistors

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Semiconducting barium titanate

Cited by 389 publications

References 21 publications

Structural and electrical properties of Barium Titanate (BaTiO3) and Neodymium doped BaTiO3 (Ba0.995Nd0.005TiO3)

Structural and electrical properties of Barium Titanate (BaTiO3) and Neodymium doped BaTiO3 (Ba0.995Nd0.005TiO3)

The Effect of Isovalent Substitutions and Dopants of 3d-Metals on the Properties of Ferroelectrics- Semiconductors

Analysis of Noise and Non-Linearity of I-V Characteristics of Positive Temperature Coefficient Chip Thermistors

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Product

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Structural and electrical properties of Barium Titanate (BaTiO3) and Neodymium doped BaTiO₃ (Ba_0.995Nd_0.005TiO₃)

Structural and electrical properties of Barium Titanate (BaTiO3) and Neodymium doped BaTiO₃ (Ba_0.995Nd_0.005TiO₃)