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The textures of thin copper films were determined quantitatively by measuring (111) pole figures with x-ray diffraction. Measurements were performed on a variety of samples, differing in copper film thickness and deposition technique, diffusion barrier material, and the presence or absence of a cap layer. Texture changes due to an annealing treatment were also recorded and correlated with stress measurements by the wafer-curvature technique. It is found that the deposition method (PVD vs CVD) has a strong effect on texture, barrier layer effects range from negligible to significant depending on the barrier material, and the effect of a cap layer is insignificant.

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Strains and stresses in aluminum thin films and patterned lines were measured using x-ray diffraction. Measurements were performed on pure aluminum and on ion-implanted aluminum, as annealed and six months after an annealing treatment. The results suggest that stresses in passivated lines, starting from an unequitriaxial state of stress, show the tendency to relax in the direction of an equitriaxial state of stress, depending on the ratio of grain size and linewidth or film thickness. The relaxation is particularly rapid in ion-implanted aluminum lines, in contradiction to the expected strengthening effect. Possible implications for electromigration resistance are discussed.