The effect of pressure on atomic positions and lattice parameters is determined for trigonal Se under pressures from 0 to 86 kbar and for trigonal Te from 0 to 40 kbar by single-crystal x-ray diffraction using a diamond anvil high-pressure cell in a standard precession camera. The structural data confirm the latticedynamical homology that had been observed in the variation of the Raman frequencies at low pressures.However, the strongly nonlinear variations in the interatomic distances and the bond angles show deviations from a structural homology as the high-pressure phase transitions are approached.
Thermal stresses in thin Cu films on silicon substrates were examined as a function of film thickness and presence of a silicon nitride passivation layer. At room temperature, tensile stresses increased with decreasing film thickness in qualitative agreement with a dislocation constraint model. However, in order to predict the stress levels, grain-size strengthening, which is shown to follow a Hall–Petch relation, must be superimposed. An alternative explanation is strain-hardening due to the increase in dislocation density, which was measured by x-ray diffraction. At 600 °C, the passivation increases the stress by an order of magnitude; this leads to a substantially different shape of the stress-temperature curves, which now resemble those of aluminum with only a native oxide layer. The effect of passivation is shown to be very sensitive to the deposition and test conditions.
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