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The recrystallization of fine‐grained polycrystalline silicon (0.1–10 μm) obtained by chemical vapor deposition (CVD) was investigated. Recrystallization of sharply <110> textured material heated at 1350°–1400°C yields an inhomogeneous assembly consisting of 0.02–2 mm long grains of 0.02–0.1 mm diam. New grains are elongated in the direction of growth of the starting material. Grains do not grow further when impinging on each other. Textured material yields a sharply textured primary matrix. No influence of large temperature gradients (up to 500°C/mm) on recrystallization phenomena was observed. The degree of recrystallization as a function of time for fine‐grained material can be described with a constant nucleation rate. From the dependence of the degree of recrystallization upon time and temperature an activation energy of 4.2 eV can be deduced for growth in fine‐grained regions.

Chemisch aus der Gasphase abgeschiedenes polykristallines Si (Korngröße l‐lO um) läßt sich durch Wärmebehandlung oberhalb 1200°C umkristallisieren (20‐200 um).

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