Deformation and recrystallization of polycrystalline silicon

Schins, W. J. H.; Radelaar, S.

doi:10.1007/bf00540324

Cited by 5 publications

(9 citation statements)

References 7 publications

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“…The recrystallization behavior of as‐received polysilicon is consistent with previous studies but with a significantly shorter period of time . Schins et al found that fine grained (0.1–10 μm) high purity bulk polycrystalline silicon grown by CVD can be recrystallized to larger oblong grains (20–2 mm in length and 20–100 μm in diameter) by 3 h thermal treatment at elevated temperatures between 1350 and 1400 °C.…”

Section: Discussionsupporting

confidence: 84%

“…Their starting material and annealing conditions are relatively similar to ours, but we find a much shorter time for nearly complete recrystallization and more homogeneous microstructure with equiaxed grains in smaller average size (≈30 μm in diameter). In addition, in previous studies the primary <110> fiber texture of the as‐grown materials was converted into a strong <111> texture with free rotation around this axis after recrystallization . In comparison, despite the existence of some abnormal elongated grains with length of ≈30 μm coinciding with the original grain growth direction in the recrystallization microstructure in the present study, we found no preferred <111> texture in the matrix by EBSD analysis.…”

Section: Discussioncontrasting

confidence: 72%

“…In addition, in previous studies the primary <110> fiber texture of the as-grown materials was converted into a strong <111> texture with free rotation around this axis after recrystallization. [30,33] In comparison, despite the existence of some abnormal elongated grains with length of %30 μm coinciding with the original grain growth direction in the recrystallization microstructure in the present study, we found no preferred <111> texture in the matrix by EBSD analysis. This can be possibly attributed to different grain growth profiles of the starting materials, leading to different numbers of grown-in crystal defects which provide different levels of driving force upon high temperature annealing.…”

Section: Evolution Of Microstructure With Processingcontrasting

confidence: 74%

“…The deformation and subsequent annealing of bulk polysilicon were studied by previous researchers under different conditions . Recrystallization in both cast and CVD grown polycrystalline silicon after high temperature plastic deformation and subsequenting annealing has been widely observed, and this is analogous to the behavior of metals.…”

Section: Discussionmentioning

confidence: 99%

“…The recrystallization behavior of as-received polysilicon is consistent with previous studies but with a significantly shorter period of time. [12,30,33] Schins et al [30] found that fine grained (0.1-10 μm) high purity bulk polycrystalline silicon grown by CVD can be recrystallized to larger oblong grains (20-2 mm in length and 20-100 μm in diameter) by 3 h thermal treatment at elevated temperatures between 1350 and 1400 C. Their starting material and annealing conditions are relatively similar to ours, but we find a much shorter time for nearly complete recrystallization and more homogeneous microstructure with equiaxed grains in smaller average size (%30 μm in diameter). In addition, in previous studies the primary <110> fiber texture of the as-grown materials was converted into a strong <111> texture with free rotation around this axis after recrystallization.…”

Section: Evolution Of Microstructure With Processingmentioning

confidence: 99%

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Microstructural Evolution of Mechanically Deformed Polycrystalline Silicon for Kerfless Photovoltaics

Murphy

Jiang

et al. 2018

Physica Status Solidi (a)

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Silicon wafers for photovoltaics could be produced without kerf loss by rolling, provided sufficient control of defects such as dislocations can be achieved. A study using mainly high resolution electron backscatter diffraction (HR‐EBSD) of the microstructural evolution of Siemens polycrystalline silicon feedstock during a series of processes designed to mimic high temperature rolling is reported here. The starting material is heavily textured and annealing at 1400 °C results in 90% recrystallization and a reduction in average geometrically necessary dislocation (GND) density from >1014 to 1013 m−2. Subsequent compression at 1150 °C – analogous to rolling – produce sub‐grain boundaries seen as continuous curved high GND content linear features spanning grain interiors. Post‐deformation annealing at 1400 °C facilitates a secondary recrystallization process, resulting in large grains typically of 100 μm diameter. HR‐EBSD gives the final average GND density in as 3.2 × 1012 m−2. This value is considerably higher than the dislocation density of 5 × 1010 m−2 from etch pit counting, so the discrepancy is investigated by direct comparison of GND maps and etch pit patterns. The GND map from HR‐EBSD gives erroneously high values at the method's noise floor (≈1012 m−2) in regions with low dislocation densities.

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Section: Discussionsupporting

confidence: 84%

Section: Discussioncontrasting

confidence: 72%

Section: Evolution Of Microstructure With Processingcontrasting

confidence: 74%

Section: Discussionmentioning

confidence: 99%