Resistivity and electromigration were investigated for thin sputtered Ag films and microstructured Ag lines. Resistivities of thin films were found to be lower compared to copper and follow the prediction of the size effect. Microstructured Ag lines show a high electromigration resistance at accelerated stress measurements. Considering joule heating of the lines, the activation energy for electromigration was found to be 0.58 eV. The extrapolated median lifetime of Ag lines was found to be similar or higher than for Cu lines.
A gas-sensor based on tunnel-field-effect-transistor (TFET) is proposed that leverages the unique current injection mechanism in the form of quantum-mechanical band-to-band tunneling to achieve substantially improved performance compared to conventional metal-oxide-semiconductor fieldeffect-transistors (MOSFETs) for detection of gas species under ambient conditions. While nonlocal phonon-assisted tunneling model is used for detailed device simulations, in order to provide better physical insights, analytical formula for sensitivity is derived for both metal as well as organic conducting polymer based sensing elements. Analytical derivations are also presented for capturing the effects of temperature on sensor performance. Combining the developed analytical and numerical models, intricate properties of the sensor such as gate bias dependence of sensitivity, relationship between the required work-function modulation and subthreshold swing, counter-intuitive increase in threshold voltage for MOSFETs and reduction in tunneling probability for TFETs with temperature are explained. It is shown that TFET gas-sensors can not only lead to more than 10 000Â increase in sensitivity but also provide design flexibility and immunity against screening of work-function modulation through non-specific gases as well as ensure stable operation under temperature variations. V C 2013 American Institute of Physics. [http://dx.
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