The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes

Nirschl, T.; Wang, P.-F.; Weber, C.; Sedlmeir, J.; Heinrich, Robert; Kakoschke, R.; Schrüfer, K.; Holz, Jürgen; Pacha, C.; Schulz, T.; Ostermayr, Martin; Olbrich, Alexander; Georgakos, Georg; Ruderer, E.; Hänsch, W.; Schmitt‐Landsiedel, D.

doi:10.1109/iedm.2004.1419106

Cited by 60 publications

(32 citation statements)

References 6 publications

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“…At the same time, the structural similarity of the TFET with the MOSFET has resulted in TFET implementations with standard complementary metal-oxidesemiconductor processing techniques. 4 However, the oncurrents of TFETs are smaller than the on-currents of MOSFETs, such that the TFET switching speed is smaller. TFETs are also ambipolar.…”

mentioning

confidence: 99%

Tunnel field-effect transistor without gate-drain overlap

Verhulst

Vandenberghe

Maex

et al. 2007

Applied Physics Letters

402

171

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Physical-gap-channel graphene field effect transistor with high on/off current ratio for digital logic applications Appl. Phys. Lett. 101, 143102 (2012) Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement Appl. Phys. Lett. 101, 143502 (2012) Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect Appl. Phys. Lett. 101, 133703 (2012) Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

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mentioning

confidence: 99%

Tunnel field-effect transistor without gate-drain overlap

Verhulst

Vandenberghe

Maex

et al. 2007

Applied Physics Letters

402

171

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“…To maintain high on currents at lower voltages, it is likely that devices will need to operate with the subthreshold swing below the conventional MOSFET limit of 60 mV/ decade ͑at room temperature͒. Band-to-band tunneling ͑BTBT͒ transport in devices has been proposed 2-7 and demonstrated [8][9][10][11][12][13] as one means to produce low-voltage transistors. The BTBT FET device concept is currently being explored in many material systems including those based on carbon nanotubes [14][15][16][17][18][19] ͑CNTs͒ and silicon.…”

Section: Influence Of Phonon Scattering On the Performance Of P-i-n Bmentioning

confidence: 99%

Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

Koswatta

Lundstrom

Nikonov

2008

Applied Physics Letters

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Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect transistors (TFET) taking semiconducting carbon nanotubes as the channel material. The on-current of these devices is mainly limited by the tunneling barrier properties, and phonon scattering has only a moderate effect. We show, however, that the off-current is limited by phonon absorption assisted tunneling, and thus is strongly temperature-dependent.

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“…subthreshold swing which has reached to a fundamental limit of 60mV/decade at room temperature. To solve these predicaments, at least two alternative transistors have been suggested, namely tunneling FET (TFET) [1], [2] and impact ionization MOS (IMOS) transistor [3]. But the advantages of TFETs are that their fabrication is compatible with standard CMOS processing and they do not rely on high energetic processes like impact ionization which is detrimental to reliability.…”

Section: Introductionmentioning

confidence: 99%

Modeling of temperature effect on threshold voltage of ballistic Ge tunneling FET

Siddiqui

Zubair

Shoron

et al. 2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

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The effect of temperature and scaling of gate length on the threshold voltage of double gate Ge tunneling FET has been studied. The threshold voltage has been determined from transconductance rather than constant current method. In the 10 nm to 50 nm range scaling has almost no effect on threshold voltage. However, threshold voltage is function of temperature in the range of 250−500 K. Besides, a simple model for threshold voltage incorporating the temperature effect has been developed for ballistic Ge tunneling FET based on the simulated results.

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The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes

Cited by 60 publications

References 6 publications

Tunnel field-effect transistor without gate-drain overlap

Tunnel field-effect transistor without gate-drain overlap

Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors

Modeling of temperature effect on threshold voltage of ballistic Ge tunneling FET

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