Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer

Sarkar, Deblina; Gossner, Harald; Hänsch, W.; Banerjee, Kaustav

doi:10.1063/1.4775358

Cited by 69 publications

(63 citation statements)

References 18 publications

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“…It is to be noted that tunnel-FETs (TFETs) employing interband tunneling 15 can also lead to sharper increase in current or lower SS compared to CFETs and hence is attractive as a sensor for biomolecules 5,6 as well as gaseous species. 16 The best reported SS value for TFETs is 30 mV/dec, 17,18 and further improvement is expected. The phenomenon of impact ionization has been shown to lead to SS as low as 72 lV/decade.…”

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confidence: 96%

Impact-ionization field-effect-transistor based biosensors for ultra-sensitive detection of biomolecules

Sarkar

Gossner

Hänsch

et al. 2013

Applied Physics Letters

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The phenomenon of impact-ionization is proposed to be leveraged for a novel biosensor design scheme for highly efficient electrical detection of biological species. Apart from self-consistent numerical simulations, an analytical formalism is also presented to provide physical insight into the working mechanism and performance of the proposed sensor. It is shown that using the impactionization field-effect-transistor (IFET) based biosensor, it is possible to obtain an increase in sensitivity of around 4 orders of magnitude at low biomolecule concentration and around 6 orders of magnitude at high biomolecule concentration compared to that in conventional FET (CFET) biosensors. Moreover, IFET biosensors can lead to significant reduction (around 2 orders of magnitude) in response time compared to CFET biosensors. V

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confidence: 96%

Impact-ionization field-effect-transistor based biosensors for ultra-sensitive detection of biomolecules

Sarkar

Gossner

Hänsch

et al. 2013

Applied Physics Letters

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“…17, and is also the only tunnel-FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts. Our device is at present the thinnest-channel subthermionic transistor, and has the potential to open up new avenues for ultra-dense and low-power integrated circuits, as well as for ultra-sensitive biosensors and gas sensors [18][19][20][21] .…”

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confidence: 99%

A subthermionic tunnel field-effect transistor with an atomically thin channel

Sarkar

Xie

Liu

et al. 2015

Nature

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841

692

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The fast growth of information technology has been sustained by continuous scaling down of the silicon-based metal-oxide field-effect transistor. However, such technology faces two major challenges to further scaling. First, the device electrostatics (the ability of the transistor's gate electrode to control its channel potential) are degraded when the channel length is decreased, using conventional bulk materials such as silicon as the channel. Recently, two-dimensional semiconducting materials have emerged as promising candidates to replace silicon, as they can maintain excellent device electrostatics even at much reduced channel lengths. The second, more severe, challenge is that the supply voltage can no longer be scaled down by the same factor as the transistor dimensions because of the fundamental thermionic limitation of the steepness of turn-on characteristics, or subthreshold swing. To enable scaling to continue without a power penalty, a different transistor mechanism is required to obtain subthermionic subthreshold swing, such as band-to-band tunnelling. Here we demonstrate band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on; subthreshold swing is a minimum of 3.9 millivolts per decade and an average of 31.1 millivolts per decade for four decades of drain current at room temperature. By using highly doped germanium as the source and atomically thin molybdenum disulfide as the channel, a vertical heterostructure is built with excellent electrostatics, a strain-free heterointerface, a low tunnelling barrier, and a large tunnelling area. Our atomically thin and layered semiconducting-channel tunnel-FET (ATLAS-TFET) is the only planar architecture tunnel-FET to achieve subthermionic subthreshold swing over four decades of drain current, as recommended in ref. 17, and is also the only tunnel-FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts. Our device is at present the thinnest-channel subthermionic transistor, and has the potential to open up new avenues for ultra-dense and low-power integrated circuits, as well as for ultra-sensitive biosensors and gas sensors.

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“…[22][23][24] FET based gas sensors exploiting work function modulation have also been proposed recently. [35][36][37][38] But, most of these techniques require unconventional materials and processing techniques. In this work, we employ Platinum oxide nanostructure to achieve a CMOS compatible H 2 sensor with sub-ppm sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Suspended core-shell Pt-PtOx nanostructure for ultrasensitive hydrogen gas sensor

Basu

Kallatt

Anumol

et al. 2015

Journal of Applied Physics

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High sensitivity gas sensors are typically realized using metal catalysts and nanostructured materials, utilizing non-conventional synthesis and processing techniques, incompatible with on-chip integration of sensor arrays. In this work, we report a new device architecture, suspended core-shell Pt-PtOx nanostructure that is fully CMOS-compatible. The device consists of a metal gate core, embedded within a partially suspended semiconductor shell with source and drain contacts in the anchored region. The reduced work function in suspended region, coupled with builtin electric field of metal-semiconductor junction, enables the modulation of drain current, due to room temperature Redox reactions on exposure to gas. The device architecture is validated using Pt-PtO 2 suspended nanostructure for sensing H 2 down to 200 ppb under room temperature. By exploiting catalytic activity of PtO 2 , in conjunction with its p-type semiconducting behavior, we demonstrate about two orders of magnitude improvement in sensitivity and limit of detection, compared to the sensors reported in recent literature. Pt thin film, deposited on SiO 2 , is lithographically patterned and converted into suspended Pt-PtO 2 sensor, in a single step isotropic SiO 2 etching. An optimum design space for the sensor is elucidated with the initial Pt film thickness ranging between 10 nm and 30 nm, for low power (<5 lW), room temperature operation. V C 2015 AIP Publishing LLC. [http://dx.

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Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer

Cited by 69 publications

References 18 publications

Impact-ionization field-effect-transistor based biosensors for ultra-sensitive detection of biomolecules

Impact-ionization field-effect-transistor based biosensors for ultra-sensitive detection of biomolecules

A subthermionic tunnel field-effect transistor with an atomically thin channel

Suspended core-shell Pt-PtOx nanostructure for ultrasensitive hydrogen gas sensor

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