The growth kinetics and mechanisms of thin aluminum-oxide films formed by the dry, thermal oxidation of a bare Al(431) substrate at a partial oxygen pressure of 1.33×10−4 Pa in the temperature range of 373–773 K were studied using x-ray photoelectron spectroscopy. The initial oxidation of the bare Al substrate proceeds by an island-by-layer growth mechanism, involving the lateral diffusion over the bare Al substrate surface of mobile oxygen species. At low temperatures (T⩽573 K), an amorphous oxide film develops that attains a limiting (uniform) thickness. At high temperatures (T>573 K), growth is not impeded at a limiting thickness. Kinetic analysis established the occurrences of two different oxide-film growth regimes: an initial regime of very fast oxide-film growth and a second, much slower oxidation stage that is observed only at T>573 K. These results could be discussed in terms of electric-field controlled, interstitial, outward transport of Al cations through a close packing of O anions in the amorphous films, and inward diffusion of O along grain boundaries in the crystalline films, respectively. For the electric-field controlled Al cation motion, a value of 2.6 eV was determined for the rate-limiting energy barrier, which is located at the metal/oxide interface. This corresponds with a Mott potential of −1.6 V.

It has been shown on a thermodynamic basis that an amorphous structure for an oxide film on its metal substrate can be more stable than the crystalline structure. The thermodynamic stability of a thin amorphous metal-oxide film on top of its single-crystal metal substrate has been modeled as a function of growth temperature, oxide-film thickness, and crystallographic orientation of the metal substrate. To this end, expressions have been derived for the estimation of the energies of the metal-substrate amorphous-oxide film interface and the metal-substrate crystalline-oxide film interface as a function of growth temperature, and crystallographic orientation of the substrate ͑including the effect of strain due to the lattice mismatch͒. It follows that, up to a certain critical thickness of the amorphous oxide film, the higher bulk Gibbs free energy of the amorphous oxide film, as compared to the corresponding crystalline oxide film, can be compensated for by the lower sum of the surface and interfacial energies. The predicted occurrence of an amorphous aluminum-oxide film on various crystallographic faces of aluminum agrees well with previous transmission electron microscopy observations.

Gold catalysts supported on TiO2 and TiO2/SiO2 were used in gas-phase propene epoxidation with a hydrogen−oxygen mixture. The catalysts were characterized by 197Au Mössbauer absorption spectroscopy (MAS), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Gold particle sizes of 1 wt % Au catalysts calcined at 673 K ranged from 3 to 6 nm. Two Au contributions were found in Mössbauer spectra and assigned to bulk metallic Au atoms in the core of a gold particle and metallic gold on the outer surface of this particle. By MAS, no evidence for charge transfer from support to Au particle could be found. The Auger parameters confirmed that the surface layer of 3−5 nm gold particles is metallic. Deactivation is not due to a change in the active gold species but is related to the TiO2 support. In the preparation via deposition-precipitation, Au(OH)3 species are converted to metallic gold during calcination. Gold particles do not gradually grow during calcination, possibly due to the simultaneous conversion of Au(OH)3 moieties with dehydroxylation of the TiO2 support. Epoxidation activity increases with the amount of surface metallic gold. No evidence for oxidized gold under reaction conditions was found.

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The localized acid−base properties of different, aluminum oxide thin layer surfaces have been evaluated with X-ray photoelectron spectroscopy (XPS). Five types of oxide layers were studied, which were produced by oxidizing aluminum in a vacuum, with an alkaline and acidic pretreatment, and in boiling water. The photoelectron core level binding energies, as measured with XPS, are evaluated for this purpose, while taking into consideration the initial and final state effects. For the structurally comparable oxides, the shifts in the O 1s binding energies are determined by their initial state chemistry. The values of the O 1s binding energy can be directly related to the surface-averaged charge on the O anions. For the Al cations, a correlation between the photoelectron core level binding energy shift and changes in the initial state chemistry was observed, but the Al 2p binding energy shifts were found to be partially due to changes in extra-atomic relaxation. The measured Al 2p binding energies and the binding energies of the resolved OH and O components in the O 1s peak showed that the studied aluminum oxides have OH sites with the same Brönsted/Lewis acid−base properties, O sites with the same Lewis base properties, and Al sites with very similar Lewis acid properties. The pseudoboehmite oxide, obtained by boiling aluminum in water, exhibits more basic O, OH, and Al sites. This oxide deviates structurally from the other oxides studied, resulting in a lower extra-atomic relaxation and Madelung potential contribution to the binding energies.