Both MOS capacitors and N-type MOSFETs with gate oxide around 2.4-2.7 nm were fabricated using standard CMOS We report nonlinear characteristics of Weibull time-to-processes. Both N2° Oxides and oxides grown On nitrogen observed on ultra thin oxides. We develop a numerical model to 'Onstant "Itage technique was adopted with initial breakdown distributions and non-poisson area scaling behavior Implanted si substrates (N2 oxides) were used in this work.quantitatively account for these effects in the context of current breakdown events defined as Oxide breakdown [31. Oxide modulation due to oxide thickness It is found that thickness was determined from capacitance measurement without proper treatment of current modulation effect, the use accounting for surface quantization and poly depletion effects. of Weibull slopes at higher failure percentiles can lead to erroneous and pessimistic reliability projection.
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