A Thin-Film SOI 180nm CMOS RF Switch Technology

Botula, A.; Joseph, A.J.; Slinkman, J.; Wolf, Randy; He, Z.X.; Ioannou, D.P.; Wagner, L.; Gordon, Michael S.; Abou-Khalil, M.; Phelps, Rick; Gautsch, M.; Abadeer, W.; Harmon, D.; Levy, M.; Benoit, J.; Dunn, J.

doi:10.1109/smic.2009.4770522

Cited by 68 publications

(22 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Amid different types of antenna designs for wide or broad band operation, the slot antenna design is one of the favorite candidates since it possesses the advantages such as simple structure, wide impedance bandwidth, and good bidirectional radiation characteristic [1][2][3]. Presently, the most employed feeding technique for slot antenna designated for wireless local area network (WLAN) operation is microstrip-fed [4] and coplanar waveguide (CPW)-fed [5].…”

Section: Acknowledgmentsmentioning

confidence: 99%

“…As the CPW-fed slot antenna is generally easy to fabricate and exhibits wider impedance bandwidth than its microstrip-fed counterpart, such design is widely discussed in the antenna community [5]. In the past decade, many CPW-fed slot antennas with dissimilar shapes and sizes can be found in the open-literature [1][2][3][4][5][6][7][8], and among them, the rectangular (or square) slot shape is commonly used for broadband [1] or UWB [6][7][8] design. In recent years, the increasing popularity in worldwide interoperability for microwave access (WiMAX) communication system has led to the design of slot antenna specifically catered only for WiMAX operation [9].…”

Section: Acknowledgmentsmentioning

confidence: 99%

“…Recently, several techniques have been proposed to optimize the technology for switching applications [1][2][3][4][5][6]. Most of those attempts focus on reducing parasitic elements of the transistor such as the drain-to-source capacitance and resistance.…”

Section: Introductionmentioning

confidence: 99%

“…Most of those attempts focus on reducing parasitic elements of the transistor such as the drain-to-source capacitance and resistance. Often, such a technology optimization requires introducing additional process steps [2] and supplementary expenses. This option is not always available for the circuit designer, especially, if one has to use external fabrication capabilities.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A high‐isolation switch based on a standard GaAs process

Zhurbenko

2011

Micro & Optical Tech Letters

View full text Add to dashboard Cite

The design and evaluation of an ultra‐wideband nonreflective single port single throw switch integrated circuit is described. The switch has a measured insertion loss of <1.2 dB and isolation of typically better than 70 dB from DC to 10 GHz. The developed circuit is intended for implementation in ultra‐wideband microwave instruments and systems requiring high level of isolation. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:984–987, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25906

show abstract

Section: Acknowledgmentsmentioning

confidence: 99%

Section: Acknowledgmentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A high‐isolation switch based on a standard GaAs process

Zhurbenko

2011

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

“…In addition, the use of HiRES substrates reduces NPN collector-to-substrate capacitance [6]. HiRES handle substrates in an SOI technology have allowed for improved rf harmonics [7]. IBM L1 qualified 0.35µm generation SiGe BiCMOS 50 and 1000 Ω-cm substrate technologies targeting WiFi PA, cellular PA, and integrated front end IC (FEIC) applications in 2007 and 2011, respectively.…”

Section: Introductionmentioning

confidence: 99%

High-resistivity SiGe BiCMOS technology development

Stamper¹,

Camillo-Castillo²,

Ding³

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

View full text Add to dashboard Cite

IBM first qualified a 0.35µ µ µ µm generation 1000 Ω Ω Ω Ω-cm high resistivity substrate (HiRES) SiGe BiCMOS technology in 2011. This technology was optimized for WiFi and cellular NPN power amplifier (PA), NPN low noise amplifier (LNA), and isolated CMOS NFET switch rf frontend-IC (FEIC) integration. It includes an optional through silicon via used as a low inductance ground path for NPN emitters. Data for 50 Ω Ω Ω Ω-cm, 1 st generation HiRES, and 2 nd generation HiRES NPN PA, LNA, and CMOS NFET switch devices are reviewed. Index Terms -High-resistivity substrate, SiGe BiCMOS, front-end-IC, switch, PA, LNA.

show abstract

Advanced technologies for next‐generation RF front‐end modules

Sahu

Aaen

Devabhaktuni

2019

Int J RF Microw Comput Aided Eng

View full text Add to dashboard Cite

The complexity of RF front-end (RFFE) modules of wireless devices has increased dramatically over the past decade. In order to meet the demands for future mobile communications, RFFEs will need to enable multiband for global roaming, and multi-mode to support multiple cellular modes, incorporate beamforming antennas, and operate at mm-wave frequencies. To this end, this article presents a summary of the recent progress in RF substrate technologies, waveguide architectures and multi-band design techniques for 5G RFFE modules, and summarizes the present and future challenges in RFFE module design.

show abstract

A Thin-Film SOI 180nm CMOS RF Switch Technology

Cited by 68 publications

References 12 publications

A high‐isolation switch based on a standard GaAs process

A high‐isolation switch based on a standard GaAs process

High-resistivity SiGe BiCMOS technology development

Advanced technologies for next‐generation RF front‐end modules

Contact Info

Product

Resources

About