The design and characterization of a slow-wave series push-pull traveling wave silicon photonic modulator is presented. At 2 V and 4 V reverse bias, the measured -3 dB electro-optic bandwidth of the modulator with an active length of 4 mm are 38 GHz and 41 GHz, respectively. Open eye diagrams are observed up to bitrates of 60 Gbps without any form of signal processing, and up to 70 Gbps with passive signal processing to compensate for the test equipment. With the use of multi-level amplitude modulation formats and digital-signal-processing, the modulator is shown to operate below a hard-decision forward error-correction threshold of 3.8×10^-3 at bitrates up to 112 Gbps over 2 km of single mode optical fiber using PAM-4, and over 5 km of optical fiber with PAM-8. Energy consumed solely by the modulator is also estimated for different modulation cases.

We present a silicon photonic traveling-wave Mach-Zehnder modulator operating near 1550 nm with a 3-dB bandwidth of 35 GHz. A detailed analysis of travelingwave electrode impedance, microwave loss, and phase velocity is presented. Small-and large-signal characterization of the device validates the design methodology. We further investigate the performance of the device in a short-reach transmission system. We report a successful 112-Gb/s transmission of four-level pulse amplitude modulation over 5 km of SMF using 2.2 V pÀp drive voltage. Digital signal processing is applied at the transmitter and receiver. 56-GBaud PAM-4 and 64-Gb/s PAM-2 transmission is demonstrated below a pre-FEC hard decision threshold of 4:4 Â 10 À3 .

We report on the design and characterization of focusing-curved subwavelength grating couplers for ultra-broadband silicon photonics optical interfaces. With implementation of waveguide dispersion engineered subwavelength structures, an ultra-wide 1-dB bandwidth of over 100 nm (largest reported to date) near 1550 nm is experimentally achieved for transverse-electric polarized light. By tapering the subwavelength structures, back reflection is effectively suppressed and grating coupling efficiency is increased to -4.7 dB. A compact device footprint of 40 µm × 20 µm is realized by curving the gratings in a focusing scheme.

We report on single rolled-up microtubes integrated with silicon-on-insulator waveguides. Microtubes with diameters of ~7 μm, wall thicknesses of ~250 nm, and lengths greater than 100 μm are fabricated by selectively releasing a coherently strained InGaAs/GaAs quantum dot layer from the handling GaAs substrate. The microtubes are then transferred from their host substrate to silicon-on-insulator waveguides by an optical fiber abrupt taper. The Q-factor of the waveguide coupled microtube is measured to be 1.5×10(5), the highest recorded for a semiconductor microtube cavity to date. The insertion loss and extinction ratio of the microtube are 1 dB and 34 dB respectively. By pumping the microtube with a 635 nm laser, the resonance wavelength is shifted by 0.7 nm. The integration of InGaAs/GaAs microtubes with silicon-on-insulator waveguides provides a simple, low loss, high extinction passive filter solution in the C+L band communication regime.

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We present an experimental study and analysis of a travelling wave series push-pull silicon photonic multi-electrode Mach-Zehnder modulator (ME-MZM) and compare its performance with a single-electrode travelling wave Mach-Zehnder modulator (TWMZM). Utilizing the functionality of the ME-MZM structure plus digital-signal-processing, we report: 1) the C-band transmission of 84 Gb/s OOK modulated data below the KP4 forward error correction threshold with 2 V drive voltage over a distance of 2 km; 2) the transmission of a 128 Gb/s optical 4-level pulse amplitude modulated signal over 1 km of fiber; and 3) the generation of a 168 Gb/s PAM-4 signal using two electrical OOK signals. By comparing the transmission system performance measurements for the ME-MZM with measurements performed using a similar series push-pull TWMZM, we show that the ME-MZM provides a clear advantage in achieving higher baud PAM-4 generation and transmission compared to a TWMZM.

We present the detailed analysis and characterization of a silicon Michelson modulator with short 500 μm phase shifters and a low VπLπ of 0.72 V-cm under reverse bias. We investigate optical modulation of reverse biased p-n and forward biased p-i-n junctions. We demonstrate for the first time that error-free operation up to 40 Gbps is possible with lumped silicon interferometric modulators. For reverse bias operation, we show that even greater bandwidth can be obtained with lower impedance drivers. Forward bias operation with pre-emphasized signals is shown to have clean eye diagrams up to 40 Gbps, however, error counting reveals a strong dependence on test patterns and that error-free operation is achievable for short pattern lengths.

We demonstrate an integrated tunable optical delay line in grating-assisted contradirectional couplers using a CMOS-compatible photonic technology. The input signal is delayed through dispersive Bragg gratings and distributedly coupled to the drop port of the coupler without backreflections. This add-drop design enables monolithic integration of grating-based delay lines without using optical circulators. The gratings are formed by slab perturbations in rib waveguides, with the index chirping realized by linearly tapering the rib widths. Both the pitch and size of the gratings are constant through the entire coupler, for a higher tolerance to fabrication errors. Continuous tuning of the optical group delay of up to 96 ps has been obtained, with a low insertion loss of less than 2 dB and a negative chromatic dispersion of -11 ps/nm that allows for bit rates of up to almost 100 Gb/s at the maximal delay. The device has a small footprint of 0.015 mm2, and can be used for on-chip optical buffering, dispersion compensation, and pulse compression.