The design and characterization of a slow-wave series push-pull traveling wave silicon photonic modulator is presented. At 2 V and 4 V reverse bias, the measured -3 dB electro-optic bandwidth of the modulator with an active length of 4 mm are 38 GHz and 41 GHz, respectively. Open eye diagrams are observed up to bitrates of 60 Gbps without any form of signal processing, and up to 70 Gbps with passive signal processing to compensate for the test equipment. With the use of multi-level amplitude modulation formats and digital-signal-processing, the modulator is shown to operate below a hard-decision forward error-correction threshold of 3.8×10^-3 at bitrates up to 112 Gbps over 2 km of single mode optical fiber using PAM-4, and over 5 km of optical fiber with PAM-8. Energy consumed solely by the modulator is also estimated for different modulation cases.

Pure hydroxyapatite (HAp) and a biphasic calcium phosphate [containing 90% of beta-tri-calcium phosphate (beta-TCP) and 10% HAp] were tailored through an aqueous solution combustion synthesis. Porous struts were prepared using all the powders along with bioglass, a known bioactive material, and subsequently characterized. Sterilized struts were implanted to the lateral side of radius bone of 24 black Bengal goats of either sex, in which a blank hole was left unfilled in a group of six specimens to act as control. The bone formation response of the three implanting materials in vivo has been studied using scanning electron microscope and histological analysis in contrast with positive controls. Push-out tests were used to assess the mechanical strength at the bone-biomaterial interface. It was observed that interfacial response was strongly dependent on combinations of different physical and chemical parameters. The surface of beta-TCP exhibited similar characteristics of bone and was distinct from those of intervening apatite layer of bioglass. Lower bone ingrowth and reduced strength was observed with HAp compared to beta-TCP/bioglass-based implants. Bone formation response of the Ca-P material varied according to the composition of the implanting material, which could be tailored through this novel synthesis.

A waveguide optical isolator realized by adhesive bonding of a garnet die, containing a Ce:YIG magneto-optic layer, on a silicon-oninsulator waveguide circuit is demonstrated. The die was bonded on top of an asymmetric Mach-Zehnder interferometer using a 100nm thick DVS-BCB adhesive bonding layer. A static magnetic field applied perpendicular to the light propagation direction results in a non-reciprocal phase shift for the fundamental quasi-TM mode in the hybrid waveguide geometry. A maximum optical isolation of 25 dB is obtained. References and links 1. K. E. Stubkjaer and M. B. Small, " Noise properties of semiconductor lasers due to optical feedback," 2011 Optical Society of America

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We report on the design and characterization of focusing-curved subwavelength grating couplers for ultra-broadband silicon photonics optical interfaces. With implementation of waveguide dispersion engineered subwavelength structures, an ultra-wide 1-dB bandwidth of over 100 nm (largest reported to date) near 1550 nm is experimentally achieved for transverse-electric polarized light. By tapering the subwavelength structures, back reflection is effectively suppressed and grating coupling efficiency is increased to -4.7 dB. A compact device footprint of 40 µm × 20 µm is realized by curving the gratings in a focusing scheme.

We present a silicon photonic traveling-wave Mach-Zehnder modulator operating near 1550 nm with a 3-dB bandwidth of 35 GHz. A detailed analysis of travelingwave electrode impedance, microwave loss, and phase velocity is presented. Small-and large-signal characterization of the device validates the design methodology. We further investigate the performance of the device in a short-reach transmission system. We report a successful 112-Gb/s transmission of four-level pulse amplitude modulation over 5 km of SMF using 2.2 V pÀp drive voltage. Digital signal processing is applied at the transmitter and receiver. 56-GBaud PAM-4 and 64-Gb/s PAM-2 transmission is demonstrated below a pre-FEC hard decision threshold of 4:4 Â 10 À3 .

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We present the detailed analysis and characterization of a silicon Michelson modulator with short 500 μm phase shifters and a low VπLπ of 0.72 V-cm under reverse bias. We investigate optical modulation of reverse biased p-n and forward biased p-i-n junctions. We demonstrate for the first time that error-free operation up to 40 Gbps is possible with lumped silicon interferometric modulators. For reverse bias operation, we show that even greater bandwidth can be obtained with lower impedance drivers. Forward bias operation with pre-emphasized signals is shown to have clean eye diagrams up to 40 Gbps, however, error counting reveals a strong dependence on test patterns and that error-free operation is achievable for short pattern lengths.