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The synthesis and crystallographic, thermodynamic and transport properties of single crystalline Rh9In4S4 were studied. The resistivity, magnetization and specific heat measurements all clearly indicate bulk superconductivity with a critical temperature, Tc ∼ 2.25 K. The Sommerfeld coefficient γ and the Debye temperature(ΘD) were found to be 34 mJ mol −1 K −2 and 217 K respectively. The observed specific heat jump, ∆C/γTc = 1.66, is larger than the expected BCS weak coupling value of 1.43. Ginzburg-Landau (GL) ratio of the low temperature GL-penetration depth, λGL≈ 5750Å5750Å, to the GL-coherence length, ξGL≈ 94Å94Å, is large: κ ∼ 60. Furthermore, we observed a peak effect in the resistivity measurement as a function of both temperature and magnetic field.

The phenomenon of polarization photosensitivity of CuInSe2/CdS thin film heterojunctions due to anisotropic transmission of linear polarized radiation (LPR) through the air-CdS polycrystalline film interface was detected. The parameters of polarization photosensitivity are shown as functions of the angle of oblique incidence θ and the incident photon energy LPR. The induced photopleochroism coefficient P increased with increasing angle in accordance with the law P=θ2, and at θ≃80° it reached 64%. As follows from polarization measurements photosensitivity, CuInSe2/CdS thin films heterostructures can be used as broadband LPR photoanalysers.

Cu(In1–xGax)(S1–ySey)2 (CIGSS) thin films were prepared by the simultaneous selenizarion/sulfurization of Cu‐In‐Ga metallic alloys. Full characterizations have been carried out using XRD, SEM, EDX, AES and Raman scattering measurements. Photosensitive In/p ‐CIGSS surface‐barrier rectifying structures were created by thermal deposition of pure Incontacts onto the surface of the CIGSS as grown films. The influences of the thin films chemical composition and the illumination conditions on the photo‐electric parameters of In/p ‐CIGSS structures were studied. Analysis of the results showed the availability of the prepared CIGSS films for creation of high efficiency thin films photovoltaic devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)