Preparation and properties of In/p‐Cu(In_1–xGa_x)(S_1–ySe_y)₂ surface‐barrier structures

Abstract

Cu(In1–xGax)(S1–ySey)2 (CIGSS) thin films were prepared by the simultaneous selenizarion/sulfurization of Cu‐In‐Ga metallic alloys. Full characterizations have been carried out using XRD, SEM, EDX, AES and Raman scattering measurements. Photosensitive In/p ‐CIGSS surface‐barrier rectifying structures were created by thermal deposition of pure Incontacts onto the surface of the CIGSS as grown films. The influences of the thin films chemical composition and the illumination conditions on the photo‐electric parameters of In/p ‐CIGSS structures were studied. Analysis of the results showed the availability of the prepared CIGSS films for creation of high efficiency thin films photovoltaic devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

A facile molecular precursor-based Cu(In,Ga)(S,Se)2solar cell with 8.6% efficiency

“…Aer annealing, the strong Raman peak of CIGSe was found at 184 cm À1 while the CIGS peak shied to 295 cm À1 , implying the formation of CIGSSe. 33,34 As we can see from the full Raman spectra (Fig. S2 †), no carbon peak at 1500 cm À1 was detected aer annealing, indicating that the carbon was completely removed in the nal CIGSSe thin lms.…”

Birefringence of CuGaxAl1 −xSe2crystals

“…The cross section of the optical index by a plane perpendicular to the X axis of radiation propagating along the X axis of a uniaxial crystal is an ellipse with semi-axes equal to ε yy and ε zz . In this case equation (6) written in the matrix form is as follows:…”

“…Optoelectronic devices and solar cells are developed on the basis of these materials [1][2][3][4]. Photoluminescence properties of CuAlSe 2 crystals doped with Er 3+ ions [3] and photoelectrical properties of surface barrier structures based on CuAlSe 2 crystals have been previously investigated [4][5][6]. These compounds possess a strong anisotropy of optical properties both in the visible and infrared spectral range.…”

Wavelength modulated optical reflectivity spectra of CuAl1 −XGaXSe2crystals

“…Biexcitons [5], interference of additional waves [6], resonance Raman scattering [7][8][9] and intense emission due to exciton polaritons and bound excitons [10][11][12] have been observed in these crystals. Optoelectronic devices and solar cells are developed on the basis of these materials [13][14][15][16][17][18][19]. The photoluminescence properties of CuAlSe 2 crystals doped with Er 3+ ions [15] as well as the photoelectrical properties of surface barrier structures on the basis of CuAlSe 2 have been studied [17,18].…”

“…Optoelectronic devices and solar cells are developed on the basis of these materials [13][14][15][16][17][18][19]. The photoluminescence properties of CuAlSe 2 crystals doped with Er 3+ ions [15] as well as the photoelectrical properties of surface barrier structures on the basis of CuAlSe 2 have been studied [17,18]. These materials possess a strong anisotropy of optical properties in the visible and infrared spectral ranges which is very important for the development of polarized optoelectronic devices.…”