The initial stages of molecular beam epitaxy of GaSb on highly mismatched GaAs(001) substrates were investigated. Transmission electron microscopy was used to analyze the defect structure in GaSb islands and at their interfaces with GaAs(001) at different stages of growth. Based on experimental observations, we propose that the semiperiodic net of 90° misfit dislocations at the GaSb/GaAs(001) interface nucleate homogeneously at the leading edges of advancing {111} planes. After nucleation, they glide inwards along the interface plane to reach their equilibrium position. Threading dislocations in GaSb layers were directly correlated with the misfit dislocation net. We demonstrate that there are no threading defects in GaSb islands when their interfaces consist solely of 90° misfit dislocations, and that threading dislocations in the GaSb epilayer are all associated with minority 60° misfit dislocations nucleated in growing islands. The number of threading dislocations per unit area of the GaSb film is found to be independent of GaSb coverage, indicating that island coalescence does not substantially increase the number of 60° dislocations.

Electron-hole pair excitations in the insulating cuprates Sr 2 CuO 2 Cl 2 were investigated by angleresolved electron energy loss spectroscopy. The optically allowed and optically forbidden transitions were observed to be strongly anisotropic in the Cu-O 2 plane. The former show a large energy dispersion ϳ1.5 eV along [110], and the latter appear at a higher energy position (ϳ4.5 eV) only along [100], but not along [110]. We interpret these results as transitions involving excitons. A small exciton model is examined to explain both the observed features. [S0031-9007(96)01069-1]

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The bonding structure and binding character for the initial stage of thin-film growth of Ni on a rutile (110) surface were studied using first-principles density functional theory. Our results show that, in the first monolayer, Ni atoms are preferentially adsorbed on top of bridging oxygen atoms and upon secondary surface oxygen. The bond strength between Ni adatom and substrate is much stronger than that between Ni adatoms. About 0.3 electrons are transferred from Ni atoms to substrate in low coverage; the adsorption of additional Ni atoms on neighboring sites decreases this transfer. In addition to the ionic bonding component, some covalent character is found in the Ni adatom–substrate bond.

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Highly oriented, polycrystalline Pb(Zr0.5Ti0.5)O3 (PZT) thin films were successfully grown on RuO2/SiO2/(001)Si using metal–organic chemical vapor deposition (MOCVD) at 525 °C. The orientation of the PZT film was controlled by using MOCVD-deposited highly textured RuO2 bottom electrodes. A (001)-oriented PZT film was observed for growth on (101)-textured RuO2. In contrast, for (110) RuO2, the growth of (001) PZT was greatly suppressed while the growth of both (110) and (111) were enhanced, resulting in a poorly (001)-textured polycrystalline film. The as-grown PZT films exhibited a dense columnar microstructure with an average grain size of 150–250 nm. Both PZT films showed excellent ferroelectric properties without any postgrowth annealing. The (001) highly oriented PZT films showed significantly higher values of remnant polarization (Pr=49.7 μC/cm2) and saturation polarization (Ps=82.5 μC/cm2). In comparison, for the PZT films grown on (110) RuO2, Pr and Ps were 21.5 and 35.4 μC/cm2, respectively.

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High-temperature superconducting YBa2Cu3O7−x films were grown by liquid delivery metal–organic chemical-vapor deposition on silver-coated stainless-steel substrates. The films are highly c-axis oriented, have a Tc above 90 K, and exhibit a surface resistance of 110 μΩ at 77 K and 3 GHz.