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Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly temperature dependent. In this paper, validity of a common non-linear silicon material model is verified by transient non-linear thermal FEM simulations of Smart Power Switches and measurements. For verification, over-temperature protection behavior of Smart Power Switches is employed. This protection turns off the switch at a predefined temperature which is used as a temperature reference in the investigation. Power dissipation generated during a thermal overload event of two Smart Power devices is measured and used as an input stimulus to transient thermal FEM simulations. The duration time of the event together with the temperature reference is confronted with simulation results and thus the validity of the silicon model is proved. In addition, the impact of non-linear thermal properties of silicon on the thermal impedance of power semiconductors is shown.

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in this contribution we show how the joint use of finite elements (FEM) thermal simulations together with validation through a state-of-art experimental setup which is capable of detecting temperature transients with 100 kHz equivalent bandwidth capability allows for an optimal comprehension of the electro-thermal interactions taking place in low-voltage Smart Power MOSFETs. In particular, we propose the usage of an experimentally validated numerical simulator to foresee the maximum temperature swing occurring on the device area in order to evaluate mechanical stresses at bond wire joints that can lead to reduced reliability of the device and, eventually, to failure

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