A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription.For more information, please contact eprints@nottingham.ac.uk I E E E P r o o f IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS 1A

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In this paper we present a novel approach to temperature sensing with optoelectronic devices which relies on the usage of bare silicon as the transducing material. The device is composed by a single mode input waveguide, a MMI region where a number of higher order modes is also allowed to propagate and two output waveguides. The refractive index variation in the MMI section due to temperature shifts induces different phase velocities of the various propagating modes. The position of the input and output waveguides together with the length and width of the MMI section are chosen in order to maximize the sensitivity of the device. Analytical calculations are presented together with BPM simulations aimed to the maximization of the sensitivity of the sensor as a function of its geometries.

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Failure mechanisms during short-circuit conditions of Silicon Carbide Power MOSFETs are analysed in this work, and a possible theoretical explanation is provided. Insight into the physics involved in such processes was inferred through experimental and numerical analyses. The TCAD structure used for electro-thermal simulations was calibrated to fit the I D -V GS characteristics of a commercial device. Adequate physical effects were considered, such as the presence of charges and traps at the oxide-SiC interface and their effect on threshold voltage and carrier mobility. Experimental evidences were explained by analyzing the numerical results. The high temperature reached during these operating conditions was addressed as the main cause of the device failure. The effect on the leakage current and the activation of a parasitic bipolar transistor are also shown.

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