A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

Abstract

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Transient out-of-SOA robustness of SiC power MOSFETs

“…If however, the heat generation rate is increased and the temperature reaches a higher threshold (TTH_RNW), then a thermal runaway condition is entered, with catastrophic failure of the device. The interpretation proposed here finds further experimental evidence in [7]: measurements of gate current and gate-source voltage clearly reveal major increase of gate leakage current components in presence of the moderate failure only, while chip infrared thermal mapping in the two situations clearly shows that, while the temperature remains homogeneously distributed in the moderate type of degradation, hot spots are on the other hand clearly detected in the case of thermal runaway. The energy values involved in determining one or the other failure type can differ appreciably.…”

A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

“…It is worth to note that the proposed method relies on temperature-dependent indicators which could easily be applied for SCSOA characterization at different temperatures. Furthermore, prior studies have already pointed out a linear dependence of the SCSOA with the initial junction temperature [23], [24]. For this reason, the expected outcome would be a linear shift towards lower SCSOA with increasing temperature.…”

Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters

“…In [10], a 2D model is proposed, with T-and S-SBC. The simulated p-well is 1 µm-deep while the drift layer has doping concentration 1.1 ⋅ 10 cm and thickness 13 µm.…”

“…SPICE) [5]- [7] or using a dedicated Finite Element (FE) software (e.g. Ansys) [2], [4], [8]- [10]. Although the first approach is a priori much faster, it is usually limited to a few thousands nodes (and often far less), leading to moderate accuracy.…”