This work deals with
the soda-lime glass/Mo/Cu2ZnSnSe4/CdS/ZnS/i-ZnO/ITO
solar cells. CdS/ZnS bilayers were synthesized
by chemical bath deposition (CBD) method as buffer layers for Cu2ZnSnSe4 (CZTSe) solar cells. The depositions were
carried out by varying the deposition time of the CdS film, while
keeping the deposition time of the ZnS film constant. The devices
went from 7.2% efficiency in a reference device using CdS to 10% in
a device including a thin film of ZnS. All devices were processed
without any additional annealing treatment on CdS/ZnS layers. J–V, EQE, SEM, Raman, and C–V characterizations were performed
to investigate the properties of the solar cells as a function of
the thickness of the CdS layer and to shed light on the origin of
influence of the ZnS layer to the device performance. Moreover, the
influence of physical properties of the buffer bilayers on the electrical
parameters of the solar cells are discussed by means of numerical
simulation.
The II-IV semiconductor compound, CdTe, has suitable electrical and optical properties as photovoltaic and high-energy radiation sensor material. As an absorber material for thinfilm-based solar cells, CdTe holds the potentiality to fabricate high-efficiency solar cells by means of low-cost technologies. This chapter presents a comprehensive review on the CdTe thin-film deposition techniques as well as on the several configurations for the solar cell structures that have led the best efficiency conversion. Current CdTe thin-film deposition techniques include sputtering, close spaced vapor transport (CSVT), chemical spray pyrolysis, and electrodeposition. These techniques have easily been adapted to deposit polycrystalline CdTe films on various flexible and rigid substrates. In regard to the device structure configuration, a variety of partner materials (transparent contact, optical window, buffer layer) were tested, and CdTe film thickness was varied to develop opaque and semitransparent devices by some techniques mentioned above. In this chapter, we will discuss about each technique used for CdTe thin-film deposition as well as its advantages and disadvantages.
Chemical bath deposition (CBD) is one of the most used methods for CdS thin films deposition, but nevertheless, the by-product from the reaction constitutes a source of gross contamination. To reduce these residues, shallow-CBD (S-CBD) is proposed as an alternative method. Albeit this method only requires 25% of solution compared to traditional-CBD (T-CDB), making this method suitable to be used in device fabrication technology. In this work, a comparison between both techniques idone through the optical (UV-vis), structural (X-ray diffraction), morphology (scanning electron microscopy), and electrical properties such as four-point resistivity and temperature-current dependence from CdS layers analysis, deposited by S-CBD and T-CBD, is reported.
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