Optimization of CdxZn1-xS compound from CdS/ZnS bi-layers deposited by chemical bath deposition for thin film solar cells application

Analysis of Hole Transport Layer and Electron Transport Layer Materials in the Efficiency Improvement of Sb2(Se1−xSx)3 Solar Cell

“…In particular, Cd 1− x Zn x S thin films have been deposited by some techniques such as vacuum evaporation, [ 23 ] spray pyrolysis, [ 24 ] and chemical bath deposition (CBD). [ 25 ] On the other hand, the ZnO thin films have been deposited by thermal evaporation, [ 26 ] chemical spray pyrolysis, [ 27 ] and sputtering. [ 28 ] Regarding the HTL materials, Cu 2 O has been synthesized by techniques such as CBD [ 29 ] and sputtering, [ 30 ] while NiO thin films have been deposited by techniques such as CBD, spray pyrolysis, [ 31 ] and sputtering.…”

CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu2ZnSnSe4 Solar Cells

“…Table lists all of the layer parameters used in the simulation for the semiconductor materials. The thicknesses of the buffer layer were taken as 70, 78, 86, and 94 nm from the experimental data described before, the band gap was from ref , and the donor’s density was fixed to 3.0 × 10 17 cm –3 at 0.6 eV above valence band, which correspond to the expected concentrations in the bare CdS layer, and is not expected to change significantly due to low contribution from the ZnS layer. The band to band recombination is considered for the bulk materials for all of the layers in the simulation .…”

“…From the measurement of the thickness as a function of the deposition time, the growth rates of 1.6 and 0.5 nm/min were calculated for CdS and ZnS, respectively. 35 Sorting the samples as 25CdS-ZnS, 30CdS-ZnS, 35CdS-ZnS, and 40CdS-ZnS, where the number means the deposition time of the CdS layers, the corresponding nominal thicknesses for each case are estimated to be 40, 48, 56, and 64 nm, respectively. In the same way, the associated thickness of ZnS is around 30 nm.…”

“…The deposition time for the CdS layers synthesis was varied (25,30,35, and 40 min), while the deposition time of the ZnS layers was kept constant at 60 min.…”

A Facile Process for Partial Ag Substitution in Kesterite Cu2ZnSn(S,Se)4 Solar Cells Enabling a Device Efficiency of over 12%

“…Several approaches have been reported to improve the V oc -deficit and band-tailing characteristics such as (i) precisely controlling the compositional ratio such as Cu/(Zn + Sn) and Zn/Sn or annealing conditions like temperature, time, initial stage pressure, and additives (i.e., Sn or SnS powder); ,− (ii) controlling the band alignment between buffer and absorber layers using alternative buffer materials such as (Cd x ,Zn 1– x )­S, Zn­(O x ,S 1– x ), In x S y , , (Zn x ,Sn 1– x )­O, and (Cu x ,Al 1– x )­O 2 or by partially alloying/doping Ge, Ag, or Cd in kesterite; ,,,− (iii) passivation in the junction region using wider band gap materials; , and (iv) introducing alkali elements such as Na, K, and Li, occupying V Cu defect sites. ,,, Among these approaches, the partial substitution of the Cu site by Ag in the kesterite system attracts the most attention and is promising because the radius of Ag + (1.14 Å) is substantially larger than that of Cu + (0.74 Å) . The crystal structures of CZTSSe and (Cu,Ag) 2 ZnSn­(S x ,Se 1– x ) 4 (ACZTSSe) with expected defect clusters are shown in Figure S1, and the relevant discussion on defects and defect clusters is provided in the Results and Discussion part .…”