Back contact modification in Sb2Se3 solar cells: The effect of a thin layer of MoSe2

Ramírez-Velasco, S.; González-Castillo, J. R.; Ayala-Mató, F.; Hernández-Calderón, V.; Jiménez-Olarte, D.; Vigil‐Galán, O.

doi:10.1016/j.tsf.2022.139227

Cited by 2 publications

(1 citation statement)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 7 ] By selenization of Mo back contact, MoSe 2 HTL is formed and enhanced antimony selenide solar cell efficiency to 5%. [ 13 ] The simulation of a Sb 2 Se 3 ‐based solar structure using SCAPS with a buffer layer of SnO 2 /CdZnS and MoSe 2 as HTL showed an efficiency of 18.77% [ 14 ] and MoSe 2 as BSF showed efficiency of 24.57% with Sb 2 Se 3 /ZnSe solar cell. [ 15 ] ITO/CdS/Sb 2 Se 3 /Spiro‐OMeTAD/Au achieved an efficiency of 7.27%.…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Kumari,

Mamta,

Chaudhary

et al. 2023

Advcd Theory and Sims

View full text Add to dashboard Cite

Sb2Se3, a promising thin‐film photovoltaic (TFPV) absorber material known for its non‐toxic nature, abundance on Earth, and stability has the inherent limitations of low doping density of 1013 cm−3 and poor carrier mobility of 1.5 cm2 V−1 s−1, leading to a low built‐in potential and inefficient carrier collection. To address these challenges and enhance the built‐in potential and carrier collection, an effective hole‐transport layer (HTL), e.g. CdS, which contains toxic components is used. A less‐toxic alternative is explored: ZnSe as the electron‐transport layer (ETL) to mitigate this issue. In this study, the performance is evaluated of Sb2Se3/ZnSe solar cells using six different HTLs (CuSCN, MoSe2, NiO, Spiro‐OMeTAD, SnS, MoOx) through the utilization of the SCAPS‐1D modeling tool. The HTL plays a critical role in improving the effectiveness of the built‐in potential, enhancing carrier collection, and suppressing back surface recombination. The analysis involves varying the thickness and doping concentration of the absorber, buffer, and HTLs, and exploring the impact of temperature, series and shunt resistance, and the metal work function of the back contact. Among the tested devices, the one with NiO as the HTL demonstrates the highest efficiency, exhibiting a VOC (open‐circuit voltage) of 0.81 V and a PCE (power conversion efficiency) of 24.07%.

show abstract

Section: Introductionmentioning

confidence: 99%

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Kumari,

Mamta,

Chaudhary

et al. 2023

Advcd Theory and Sims

View full text Add to dashboard Cite

show abstract

Controlled conduction band offset in Sb2Se3 solar cell through introduction of (Zn,Sn)O buffer layer to improve photovoltaic performance: A simulation study

Jalali¹,

Orouji²,

Gharibshahian³

2023

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

Back contact modification in Sb2Se3 solar cells: The effect of a thin layer of MoSe2

Cited by 2 publications

References 37 publications

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Controlled conduction band offset in Sb2Se3 solar cell through introduction of (Zn,Sn)O buffer layer to improve photovoltaic performance: A simulation study

Contact Info

Product

Resources

About

Back contact modification in Sb2Se3 solar cells: The effect of a thin layer of MoSe2

Cited by 2 publications

References 37 publications

Performance Analysis of CdS‐Free, Sb2Se3/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Performance Analysis of CdS‐Free, Sb2Se3/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Controlled conduction band offset in Sb2Se3 solar cell through introduction of (Zn,Sn)O buffer layer to improve photovoltaic performance: A simulation study

Contact Info

Product

Resources

About

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts

Performance Analysis of CdS‐Free, Sb₂Se₃/ZnSe p–n Junction Cells with Various Hole Transport Layers and Contacts