Controlled conduction band offset in Sb2Se3 solar cell through introduction of (Zn,Sn)O buffer layer to improve photovoltaic performance: A simulation study

Improving Photocurrent in Sb2Se3 Thin‐Film Solar Cells Through Sb2S3 Electron Reflector Layer: A Simulation Study

“…Furthermore, the short‐circuit current density (J sc ) is also a significant limiting parameter when it comes to achieving high efficiency in Sb 2 Se 3 cells. [ 17,18 ] It has been observed that the J sc of conventional CdS/Sb 2 Se 3 cells is lower than initially anticipated. The decrease in J sc can be attributed to the high recombination rate at the rear side of the device.…”

“…The selection of these parameters has been meticulously made by incorporating findings from multiple theoretical and experimental research studies. [ 7,13,17,18,46–48 ] At room temperature, both holes and electrons have an approximate thermal velocity of 10 7 cm s ‐1 . In this study, we utilized the absorption coefficients of various materials [ 7,49 ] such as Sb 2 Se 3 , Sb 2 S 3 , CdS, ZnO, and ZnO:Al, as depicted in Figure .…”

“…[ 7 ] Furthermore, we assigned a defect density of 4.8 × 10 12 cm −3 for Sb 2 Se 3 and 1 × 10 14 cm −3 for CdS, which is supported by existing studies. [ 7,17 ] In this study, we assume the presence of a single type of defect with a Gaussian distribution of energy in the buffer layer. The defect of CdS layer is accompanied by trap capture cross‐sections of 3 × 10 −15 and 2 × 10 −14 cm 2 for electrons and holes, respectively.…”

Variation in the Bandgap of Amorphous Zinc Tin Oxide: Investigating the Thickness Dependence via In Situ STS

“…Both ZnO and SnO 2 are well-known n-type TCOs and have been shown by Hautier et al to possess among the highest electron mobilities among all binary oxides . The arguments for a-ZTO are numerous: a-ZTO is only composed of common and abundant elements; it has been shown to possess high mobilities even in an amorphous state; and it has already been implemented in a wide range of applications such as organic light-emitting diodes (O-LEDs), photovoltaic cells, − and thin film transistors (TFTs). , It is imperative to understand how key properties such as morphology, bandgap, and conductivity are affected in the low-thickness regime as these properties often play a decisive role when it comes to selecting the compatibility of a material in a device …”

Optoelectronic Characterisation of Silicon and CIGS Photovoltaic Solar Cells

“…This layer is deposited on a layer of substrate such as glass, stainless steel, or plastic and, due to the thinness of this layer, it is possible to build flexible devices that can have many applications. Some examples of second-generation materials are amorphous silicon, gallium arsenide and Copper Indium Gallium di-selenide (CIGS) (Isabela et al, 2021;Torres et al, 2023a-b;Palit and Hussain, 2018;Jalali et al, 2023;Kant and Singh, 2022). There is also the third generation, which includes non-based silicon solar cell materials, such as Perovskite Solar Cells (PSC), Organic Solar Cells (OSC) and Dye-Sensitized Solar Cells (DSSC).…”