The evolution with increasing layer thickness of the structural and electrical properties of GaAs grown directly on Si or Si-on-insulator (SOI) by metalorganic chemical vapor deposition is reported. There is a substantial improvement in the surface morphology and near-surface crystallinity of the GaAs in thicker films (≥1.5 μm). The implant activation efficiency of 60-keV 29Si ions at a thickness of 4 μm is comparable to that seen in bulk GaAs. The deep level concentration is also observed to decrease with increasing layer thickness. Transmission electron microscopy reveals average defect densities near 108 cm−2 in films deposited either on misoriented or exact (100) Si, and in those grown on SOI.
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