We performed an experimental study of coupled optical cavity arrays in a photonic crystal platform. We find that the coupling between the cavities is significantly larger than the fabricationinduced disorder in the cavity frequencies. Satisfying this condition is necessary for using such cavity arrays to generate strongly correlated photons, which has potential application to the quantum simulation of many-body systems.

We explore the effects of surfactant-mediated epitaxy on the structural, electrical, and optical properties of fast metal-semiconductor superlattice photoconductors. Specifically, application of a bismuth flux during growth was found to significantly improve the properties of superlattices of LuAs nanoparticles embedded in In 0.53 Ga 0.47 As. These improvements are attributed to the enhanced structural quality of the overgrown InGaAs over the LuAs nanoparticles. The use of bismuth enabled a 30% increase in the number of monolayers of LuAs that could be deposited before the InGaAs overgrowth degraded. Dark resistivity increased by up to $15Â while carrier mobility remained over 2300 cm 2 /V-s and carrier lifetimes were reduced by >2Â at comparable levels of LuAs deposition. These findings demonstrate that surfactant-mediated epitaxy is a promising approach to enhance the properties of ultrafast photoconductors for terahert generation.

Improved optical properties of InAs quantum dots grown with an As 2 source using molecular beam epitaxy

We report the growth and characterization of nearly lattice-matched LuAs/GaAs heterostructures. Electrical conductivity, optical transmission, and reflectivity measurements of epitaxial LuAs films indicate that LuAs is semimetallic, with a room-temperature resistivity of 90 μΩ cm. Cross-sectional transmission electron microscopy confirms that LuAs nucleates as self-assembled nanoparticles, which can be overgrown with high-quality GaAs. The growth and material properties are very similar to those of the more established ErAs/GaAs system; however, we observe important differences in the magnitude and wavelength of the peak optical transparency, making LuAs superior for certain device applications, particularly for thick epitaxially embedded Ohmic contacts that are transparent in the near-IR telecommunications window around 1.3 μm.

Resonant x-ray scattering from self-assembled In P ∕ Ga As ( 001 ) islands: Understanding the chemical structure of quaternary quantum dots Appl. Phys. Lett. 92, 021903 (2008); 10.1063/1.2820756 Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) Appl. Phys. Lett. 78, 320 (2001); 10.1063/1.1339850Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs (001)