The complete atomic structure of a five-monolayer film of LaAlO3 on SrTiO3 has been determined for the first time by surface x-ray diffraction in conjunction with the coherent Bragg rod analysis phase-retrieval method and further structural refinement. Cationic mixing at the interface results in dilatory distortions and the formation of metallic La(1-x)SrxTiO3. By invoking electrostatic potential minimization, the ratio of Ti{4+}/Ti{3+} across the interface was determined, from which the lattice dilation could be quantitatively explained using ionic radii considerations. The correctness of this model is supported by density functional theory calculations. Thus, the formation of a quasi-two-dimensional electron gas in this system is explained, based on structural considerations.

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The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric BaTiO3 thin films on the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline BaTiO3 directly on SOI and engineer integrated waveguide structures that simultaneously confine light and an RF electric field in the BaTiO3 layer. Using on-chip photonic interferometers, we extract a large effective Pockels coefficient of 213 ± 49 pm/V, a value more than six times larger than found in commercial optical modulators based on lithium niobate. The monolithically integrated BaTiO3 optical modulators show modulation bandwidth in the gigahertz regime, which is promising for broadband applications.

We demonstrate magnetic field control of surface plasmon excitations in noble-metal/ferromagnetic/noble metal trilayers, analogous to the effects previously observed in semiconductor structures. We show that the coupling of an external magnetic field to the surface plasmon-polariton wave vector is greatly enhanced in the metallic structure due to the ferromagnetic nature of one of its constituents. The observed coupling could be used to modulate the surface plasmon response in ultrasensitive spectroscopic applications. DOI: 10.1103/PhysRevB.76.153402 PACS number͑s͒: 78.20.Ls, 73.20.Mf, 78.66.Bz, 42.25.Bs Surface plasmon-polariton ͑SPP͒ modes are electromagnetic excitations localized at the interface between two media, one with positive and the other with negative dielectric constant. These modes may appear at the interface between a degenerate semiconductor and a dielectric or between a metal and a dielectric. In the former case, due to the low value of the plasma frequency of the semiconductor, the frequencies of the SPPs are restricted to the far infrared range, whereas in the second case the SPP modes can have frequencies varying from the far infrared to the visible range. The propagation characteristics of the SPPs and their EM field distribution depend strongly on the optical properties and interface morphology of the system. This dependence has been exploited in different optical contexts such as light guiding at the subwavelength scale, 1-3 optical switching, 4 biochemical sensing, 5 or nanometer resolved far-field optical microscopy. 6 To date SPPs are commonly considered as passive, i.e., insensitive to the magnetic field and just depending on the optical and geometrical properties of the system. In this work we demonstrate the control of SPP excitations in metallic trilayer structures by means of an external magnetic field. We show that the coupling of the magnetic field to the wave vector of the plasmon is greatly enhanced by the ferromagnetic nature of the trilayer structure. This effect was first studied theoretically in semiconductor-based SPPs 7-9 and in metals. 10 The effect of the magnetic field on the properties of the SPP modes depends on the relative orientation of the applied magnetic field with respect to the wave vector of the SPP. In particular, we will show that when the magnetic field is applied perpendicular to the direction of propagation of the SPP and parallel to the interface, it modifies the dispersion relation of the SPP mode in such a way that the dispersion relation depends on the k direction ͓i.e., w͑k͒ w͑−k͔͒. Experimentally this magnetic field induced nonreciprocity has been observed on semiconductor-based SPPs, 11 but not yet in metallic systems. This is due to the high magnetic field needed to observe magnetic field induced effects on metallic based SPPs.One way to reduce the required external magnetic field is to incorporate ferromagnetic metals. Due to the magnetooptical ͑MO͒ activity that many ferromagnetic materials exhibit at low magnetic fields, surface magnetopl...

Metallic electronic transport in nickelate heterostructures can be induced and confined to two dimensions (2D) by controlling the structural parameters of the nickel-oxygen planes.

We describe a general materials design approach that produces large orbital energy splittings (orbital polarization) in nickelate heterostructures, creating a two-dimensional single-band electronic surface at the Fermi energy. The resulting electronic structure mimics that of the high temperature cuprate superconductors. The two key ingredients are: (i) the construction of atomicscale distortions about the Ni site via charge transfer and internal electric fields, and (ii) the use of three component (tri-component) superlattices to break inversion symmetry. We use ab initio calculations to implement the approach, with experimental verification of the critical structural motif that enables the design to succeed.

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Functional oxides are an untapped resource for futuristic devices and functionalities. These functionalities can range from high temperature superconductivity to multiferroicity and novel catalytic schemes. The most prominent route for transforming these ideas from a single device in the lab to practical technologies is by integration with semiconductors. Moreover, coupling oxides with semiconductors can herald new and unexpected functionalities that exist in neither of the individual materials. Therefore, oxide epitaxy on semiconductors provides a materials platform for novel device technologies. As oxides and semiconductors exhibit properties that are complementary to one another, epitaxial heterostructures comprised of the two are uniquely poised to deliver rich functionalities. This review discusses recent advancements in the growth of epitaxial oxides on semiconductors, and the electronic and physical structure of their interfaces. Leaning on these fundamentals and practicalities, the material behavior and functionality of semiconductor-oxide heterostructures is discussed, and their potential as device building blocks is highlighted. The culmination of this discussion is a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis. This overview is intended to stimulate ideas for new concepts of functional devices and lay the groundwork for their realization.