Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

Kumah, Divine P.; Wu, J.; Husseini, Naji S.; Dasika, V. D.; Goldman, R. S.; Yacoby, Y.; Clarke, Roy

doi:10.1063/1.3535984

Cited by 12 publications

(16 citation statements)

References 17 publications

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“…Moreover, the substrate applies lateral compressive stress on the dot which would tend to further increase the vertical spacing. This behavior has also been observed in the SK grown dot system 24 and was ascribed to bowing of the atomic layers in the QD.…”

supporting

confidence: 66%

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Cohen

Yochelis

Westreich

et al. 2011

Applied Physics Letters

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We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy ͑DHE͒ technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

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supporting

confidence: 66%

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Cohen

Yochelis

Westreich

et al. 2011

Applied Physics Letters

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“…This is ascribed to the bowing of the atomic layers in the dots, because their lattice constant is larger than that of the GaAs. This feature was also observed in QDs grown by Stranski-Krastanow method [30]. In both systems, the dots’ electron density peaks seem to have a small dip at the center.…”

Section: Resultssupporting

confidence: 63%

“…TEM characterization indicates that in some systems, the Ga diffuses further up at the dot’s perimeter than at the center [36]. Comparison of these results with those obtained on InAs/GaAs dots grown by the Stranski-Krastanov method [30], reveals that the Ga diffusion is somewhat larger in the DHE grown dots. However, since temperature greatly affects the inter-diffusion process, the exact difference may depend on specific growth parameters.…”

Section: Resultsmentioning

confidence: 93%

“…InAs/GaAs is a relatively simple system—being composed of only three elements, and the SK-grown equivalent system has been widely studied [12–15], and also analyzed by COBRA [30]. InAs and GaSb are two materials with less than 1% difference in their lattice constant, and so the InAs/GaSb is an interesting system which can be grown via the DHE method, but not by SK.…”

Section: Resultsmentioning

confidence: 99%

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Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

Cohen

Elfassy

Koplovitz

et al. 2011

Sensors

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In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate (“nano-drilling”) is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.

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“…[ 156,157 ] From COBRA analysis, the composition profile as well as the shape of dots could be extracted, providing important insights into dot formation and interdiffusion. [ 158–160 ]…”

Section: Applicationsmentioning

confidence: 99%

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

Disa

Walker

Ahn

2020

Adv Materials Inter

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In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk of a crystal are contained in the intensity and position of Bragg peaks in X‐ray diffraction, CTRs carry detailed information about the atomic structure at the interface. Developments in synchrotron X‐ray sources, instrumentation, and analysis procedures have made CTR measurements into extremely powerful tools to study atomic reconstructions and relaxations occurring in a wide variety of interfacial systems, with relevance to chemical and electronic functionalities. In this review, an overview of the use of CTRs in the study of atomic structure at interfaces is provided. The basic theory, measurement, and analysis of CTRs are covered and applications from the literature are highlighted. Illustrative examples include studies of complex oxide thin films and multilayers.

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Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

Cited by 12 publications

References 17 publications

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

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