Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m0 to 0.5m0 with increasing electron concentration in the range (0.9−4) × 10 20 due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).

The properties of zinc oxide are examined as an analog of gallium nitride over a wide range of temperatures and possible applications. Its economic and environmental advantages are noted, as well as its radiation hardness, compared to group III nitrides. Methods for growing films and nanostructures with high crystal perfection are proposed. In particular, a magnetron technique for layer-by-layer growth of films is implemented which makes it possible to obtain high structural perfection and substantial thicknesses unattainable by several other methods. The feasibility of producing monochromatic UV radiation from films excited by short-wavelength radiation and electrons is demonstrated; this means that they may be useable as short-wavelength radiation sources. Efficient field emission by ZnO nanostructures and films is demonstrated and opens up the prospect of their use in vacuum microelectronics equipment. Nitrogen-doped ZnO films, in particular, have been used to fabricate a phototransistor with a sensitivity two orders of magnitude higher than conventional detectors. The physical basis for creating LEDs for different colors based on ZnO films and solid solutions with CdO is discussed. The importance of studying the physics and technology of zinc oxide-based devices is emphasized.

Multilayered ZnO films were deposited by rf magnetron sputtering on silicon and sapphire substrates. The aim of this work is to improve structural quality of ZnO thin films grown on just listed substrates. Presented X-ray diffraction data testify to remarkable relaxation of compressive stress in twoand three-layered ZnO films in comparison with single-layer one.

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