Strong quantization effects and tuneable near‐infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ‐rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report on the low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thicknesses ranging from 200 nm to a single unit cell. In both materials, PL shows a dramatic decrease by 10 4 -10 5 when film thickness is reduced from 200 to 10 nm. Based on evidence from continuouswave (cw) and time-resolved PL, we propose a model explaining the PL decrease as a result of nonradiative carrier escape via surface states. Our results emphasize the need for special passivation of two-dimensional films for optoelectronic applications.
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