Photoluminescence of two-dimensional GaTe and GaSe films

Pozo-Zamudio, Osvaldo Del; Schwarz, Stefan; Sich, M.; Акимов, И. А.; Bayer, М.; Schofield, Ross C.; Chekhovich, E. A.; Robinson, Benjamin J.; Kay, Nicholas D.; Kolosov, Oleg; Дмитриев, А. И.; Lashkarev, G. V.; Borisenko, D. N.; Kolesnikov, N. N.; Tartakovskii, A. I.

doi:10.1088/2053-1583/2/3/035010

Cited by 90 publications

(102 citation statements)

References 40 publications

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“…27,29 In the presence of these defect sites, free excitons are efficiently trapped in reduced dimensions (2D), when the electron wavefunction is tightly localized, at the defect/impurity sites. 7 This agrees well with our observation where the new PL feature also appears ∼30-40 meV below the main emission line. To confirm our results, we have performed similar measurements on large area 2D-GaSe sheets synthesized by chemical vapor deposition technique (CVD) at 750°C.…”

Section: Changes In Optical Properties Of Ptmcs After Pyridine Treatmentsupporting

confidence: 93%

Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique

et al. 2015

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Owing to their strong photon emission, low excitonic binding energies, and nearly-ideal band offset values for water splitting reactions, direct gap quasi-2D gallium chalcogenides are potential candidates for applications in energy harvesting, optoelectronics, and photonics. Unlike other 2D materials systems, chemical functionalization of gallium chalcogenides is still at its seminal stages. Here, we propose vapor phase pyridine intercalation technique to manipulate optical properties of gallium chalcogenides. After functionalization, the excitonic dynamics of quasi-2D GaSe change significantly as evidenced by an increase in integrated PL intensity and emergence of a new emission feature that is below the band edge. Based on our DFT calculations, we attribute these to formation of bound exciton complexes at the trap sites introduced by chemical reaction between pyridine and GaSe. On the contrary, pyridine functionalization does not impact the optical properties of GaTe, instead treats GaTe surface to prevent oxidization of tellurium atoms. Overall, results suggest novel ways to control properties of gallium chalcogenides on demand and unleash their full potential for a range of applications in photonics and optoelectronics.

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Section: Changes In Optical Properties Of Ptmcs After Pyridine Treatmentsupporting

confidence: 93%

Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique

et al. 2015

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“…30 Beechem et al and Del Pozo-Zamudio et al showed that oxidation of ultrathin GaSe and InSe films lead to the reduction of photoluminescence. 31,32 However, the structures, physical, and chemical properties of the modified MX sheets are still unclear and await explorations.…”

Section: Introductionmentioning

confidence: 99%

Monolayer group-III monochalcogenides by oxygen functionalization: a promising class of two-dimensional topological insulators

et al. 2018

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Monolayer group-III monochalcogenides (MX, M = Ga, In; X = S, Se, Te), an emerging category of two-dimensional (2D) semiconductors, hold great promise for electronics, optoelectronics and catalysts. By first-principles calculations, we show that the phonon dispersion and Raman spectra, as well as the electronic and topological properties of monolayer MX can be tuned by oxygen functionalization. Chemisorption of oxygen atoms on one side or both sides of the MX sheet narrows or even closes the band gap, enlarges work function, and significantly reduces the carrier effective mass. More excitingly, InS, InSe, and InTe monolayers with double-side oxygen functionalization are 2D topological insulators with sizeable bulk gap up to 0.21 eV. Their lowenergy bands near the Fermi level are dominated by the p x and p y orbitals of atoms, allowing band engineering via in-plane strains. Our studies provide viable strategy for realizing quantum spin Hall effect in monolayer group-III monochalcogenides at room temperature, and utilizing these novel 2D materials for high-speed and dissipationless transport devices.

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confidence: 99%

Charge Transfer and Functionalization of Monolayer InSe by Physisorption of Small Molecules for Gas Sensing

Cai

Zhang

2017

J. Phys. Chem. C

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First-principles calculations are performed to investigate the effects of the adsorption of gas molecules (CO, NO,NO 2 , H 2 S, N 2 , H 2 O, O 2 , NH 3 and H 2 ) on the electronic properties of atomically thin indium selenium (InSe). Our study shows that the lone-pair states of Se are located at the top of the valence band of InSe and close to the Fermi energy level, implying its high sensitivity to external adsorbates. Among these gas molecules, H 2 and H 2 S are strong donors, NO, NO 2 , H 2 O and NH 3 are effective acceptors, while CO and N 2 exhibit negligible charge transfer. The O 2 molecule has very limited oxidizing ability and a relatively weak interaction with InSe which is comparable to the N 2 adsorption. A clear band gap narrowing is found for the H 2 S, NO 2 , and NH 3 adsorbed systems whereas a Fermi level shifting to the conduction band is observed upon a moderate uptake of H 2 molecules. Our analysis suggests several interesting applications of InSe: 1). Due to the different interaction behaviors with these external molecules, InSe can be used for gas sensing applications; 2). by monitoring the adsorption/desorption behavior of these gas molecules, the population of hole states in InSe due to photon stimulation or defect production can be quantitatively estimated; and 3). it is promising for novel electronic and optoelectronic applications since the adsorption-induced in-gap states and strong 2 charge transfer are able to change the content and polarity of charged carriers and lead to different optical properties.

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Photoluminescence of two-dimensional GaTe and GaSe films

Cited by 90 publications

References 40 publications

Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique

Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique

Monolayer group-III monochalcogenides by oxygen functionalization: a promising class of two-dimensional topological insulators

Charge Transfer and Functionalization of Monolayer InSe by Physisorption of Small Molecules for Gas Sensing

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