Structural and morphological properties of ZnO:Ga thin films

Khranovskyy, Volodymyr; Großner, Ulrike; Nilsen, Ola; Лазоренко, В. Й.; Lashkarev, G. V.; Svensson, B. G.; Yakimova, Rositsa

doi:10.1016/j.tsf.2005.12.269

Cited by 111 publications

(63 citation statements)

References 19 publications

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“…This manifest there has been tensile stress in the plane of the films as compared with unstressed powder. This may be mainly due to the radius of Ga 3+ (0.062 nm) is smaller than that of Zn 2+ (0.074 nm) [9,10], The replacement of Zn 2+ with Ga 3+ caused the decrease of the c-axis lattice parameter, which may result in the increase of the diffraction angle. What's more, there is a fluctuation of diffraction angle as substrate temperature increases.…”

Section: Methodsmentioning

confidence: 99%

“…The amount of Ga 2 O 3 added to the target was 10 wt. % [10]. The size of the target was 250 mm and 80 mm in length and width separately.…”

Section: Methodsmentioning

confidence: 99%

“…Ga-doped zinc oxide films (GZO) have some advantages compared with Al-doped zinc oxide films (AZO). First of all, they are very close in atom radius: the radius of Ga 3+ (0.062 nm) is closer to that of Zn 2+ (0.074 nm) than that of Al 3+ (0.053 nm) [9,10]. Secondly, Ga is more resistive to oxidation compared to Al.…”

Section: Introductionmentioning

confidence: 91%

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Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Wang

Zhang

2009

J. Phys.: Conf. Ser.

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Section: Methodsmentioning

confidence: 99%

“…The amount of Ga 2 O 3 added to the target was 10 wt. % [10]. The size of the target was 250 mm and 80 mm in length and width separately.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Wang

Zhang

2009

J. Phys.: Conf. Ser.

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“…Other types of the texture control were recently reported, such as, epitaxial growth on a specific substrate, sample position (141), precursor flux control, substrate tilting and using an external oxygen ion source to control the oxygen ion bombardment during growth (118,142,143 ). Earlier, we demonstrated the change of the texture of the ZnO films from (0001) to (10-11) via Ga doping and the morphology control via respective annealing (144,145). We have recently reported on the control of ZnO nanostructure location and inclination via respective substrate miss cut in the epitaxial growth of ZnO on 4H-SiC (13).…”

Section: Recent Achievements In Zno Nanocrystal Based Biosensorsmentioning

confidence: 87%

ZnO materials and surface tailoring for biosensing

Yakimova

Selegård²,

Khranovskyy³

et al. 2012

Front Biosci

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“…It has successfully being used in MOCVD growth process to grow aligned hexagonal nanorods and whiskers, nanotube arrays and thin films at temperature range 500 -650 °C on various substrates [20]. Earlier, we have reported successful growth of pure ZnO and Ga doped films even at lower substrate growth temperatures (T = 250 °C) by PEMOCVD [21,22]. It was concluded that the plasma discharge promotes the precursors decomposition and increases the ZnO adatoms mobility, resulting in high quality film formation [23] at lowered temperatures.…”

Section: Precursors Chemistrymentioning

confidence: 99%

Morphology engineering of ZnO nanostructures

Khranovskyy

Yakimova

2012

Physica B: Condensed Matter

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The nanosized ZnO structures were grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) at the temperature range 200 -500 °C at variable precursor pressure. The temperature induced evolution of the ZnO microstructure was observed, resulting in regular transformation of the material from conventional polycrystalline layers to hierarchically arranged sheaves of ZnO nanowires. The structures obtained were uniformly planarly located over the substrate and possessed as low nanowires diameter as 30 -45 nm at the tips. The observed growth evolution is explained in term of ZnO crystal planes free energy difference and growth kinetic. For comparison, the convenient growth at constant precursor pressure on Si and SiC substrates has been performed, resulted in island-type grown ZnO nanostructures. The demonstrated nanosized ZnO structures may have unique possible areas of application, which are listed here. PACS keywordsZnO nanostructures, APMOCVD, temperature evolution IntroductionEngineering of the crystal's morphology and microstructure has initiated great research interest. Particularly control of the shapes, size and morphology of novel or mature functional materials is of high interest, enabling manifestation of their novel properties or tailorable functions. Zinc oxide is a promising II-VI semiconductor, having wide band gap ~3.37 eV and a large exciton binding energy ~60 meV at room temperature. It has attracted increasing interest due to its potential applications in electronics [1], photonics [2], sensors [3], transistors [4], field emission displays [5], etc. It is one of the most gifted materials for the fabrication of short-wavelength optoelectronic devices including blue-UV light-emitting and room temperature UV lasing diodes [6]. ZnO possesses one of the richest family of nanostructures: various nanorods, nanopillars, nanowires, nanodonats, nanodrums, nanopropellers, nanonails, nanobridges etc. have been widely reported in literature [7]. However, such exotic morphologies of ZnO nanostructures complicate their functionality, i. e. hamper their practical applications, while the controllable growth of ordered and uniform ZnO nanostructure is highly desirable and may enable their possible applications in various devices. Particular interest represents the hierarchical ZnO nanostructures, being able to combine the high surface-to-volume ratio and fundamental material properties of ZnO, which may be essential for specific applications such as gas-and bio-sensors, hybrid solar cells, etc [8]. Recently, we have demonstrated the ability to grow well-ordered ZnO nanopillars on a seeding layer via selective homoepitaxial growth by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) [9]. Moreover, by this technique we succeeded in obtaining ZnO nanostructures of diverse morphology. Clear evolution of the

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Structural and morphological properties of ZnO:Ga thin films

Cited by 111 publications

References 19 publications

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

ZnO materials and surface tailoring for biosensing

Morphology engineering of ZnO nanostructures

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