Strong quantization effects and tuneable near‐infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ‐rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.

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