The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional sp-bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

The discovery of high-temperature superconductivity in doped copper-oxide (cuprate) materials 1 triggered an enormous interest in the relation between Mott physics, magnetism, and superconductivity 2 . Undoped cuprates are antiferromagnetic Mott insulators, where the Coulomb repulsion between electrons occupying the same atomic orbital prevents carriers from moving through the crystal. The introduction of electron vacancies or 'holes' into these materials, however, leads to the formation of Cooper pairs and their condensation into a macroscopically coherent superconducting quantum state. Now several decades later, there still is no consensus regarding the precise mechanism of cuprate superconductivity. Progress in this field would greatly benefit from discoveries of superconductivity in other Mottinsulating materials 3 . Here, we show that adsorption of only 1/3 monolayer of Sn atoms on a heavily boron-doped silicon (111) substrate 4 produces a strictly two-dimensional superconductor with a critical temperature 𝑻 𝐜 of 4.7 ± 0.3 K that rivals that of NaxCoO2•yH2O 5,6 Both systems can be viewed as close but very rare realizations of the triangular-lattice spin-1/2 Heisenberg antiferromagnet, which is a strong candidate for hosting exotic magnetism 7 and chiral superconductivity 8-11 . These findings point to 'cupratelike' physics in a simple sp-bonded non-oxide system and suggest the possibility of exploring unconventional superconductivity using a conventional semiconductor platform.

Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

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Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkably similar to those of the high-Tc copper oxide compounds. In this work, we show that the maximum hole-density of this system increases with decreasing domain size as the area of the Mott insulating domains approaches the nanoscale regime. Concomitantly, scanning tunneling spectroscopy data at 4.4 K reveal an increasingly prominent zero bias anomaly (ZBA). We consider two different scenarios as potential mechanisms for this ZBA: chiral 2 − 2 + i wave superconductivity and a dynamical Coulomb blockade (DCB) effect. The latter arises due to the formation of a resistive depletion layer between the nano-domains and the substrate. Both models fit the tunneling spectra with weaker ZBAs, while the DCB model clearly fits better to spectra recorded at higher temperatures or from the smallest domains with the strongest ZBA. Consistently, STS spectra from the lightly-doped substrates display oscillatory behavior that can be attributed to conventional Coulomb staircase behavior, which becomes stronger for smaller sized domains. We conclude that the ZBA is predominantly due to a DCB effect, while a superconducting instability is absent or a minor contributing factor.

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Understanding the effects of the interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, a large electronic and magnetic response is reported to be induced in the intrinsic magnetic topological insulator MnBi 2 Te 4 by controlling the propagation of surface oxidation. It is shown that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, a dramatic reversal of the sign of the anomalous Hall effect is observed to be driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi 2 Te 4 on the stoichiometry of the top layers. This study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.