The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional sp-bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

The discovery of high-temperature superconductivity in doped copper-oxide (cuprate) materials 1 triggered an enormous interest in the relation between Mott physics, magnetism, and superconductivity 2 . Undoped cuprates are antiferromagnetic Mott insulators, where the Coulomb repulsion between electrons occupying the same atomic orbital prevents carriers from moving through the crystal. The introduction of electron vacancies or 'holes' into these materials, however, leads to the formation of Cooper pairs and their condensation into a macroscopically coherent superconducting quantum state. Now several decades later, there still is no consensus regarding the precise mechanism of cuprate superconductivity. Progress in this field would greatly benefit from discoveries of superconductivity in other Mottinsulating materials 3 . Here, we show that adsorption of only 1/3 monolayer of Sn atoms on a heavily boron-doped silicon (111) substrate 4 produces a strictly two-dimensional superconductor with a critical temperature 𝑻 𝐜 of 4.7 ± 0.3 K that rivals that of NaxCoO2•yH2O 5,6 Both systems can be viewed as close but very rare realizations of the triangular-lattice spin-1/2 Heisenberg antiferromagnet, which is a strong candidate for hosting exotic magnetism 7 and chiral superconductivity 8-11 . These findings point to 'cupratelike' physics in a simple sp-bonded non-oxide system and suggest the possibility of exploring unconventional superconductivity using a conventional semiconductor platform.

Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing chemical disorder. Here we successfully exploit a modulation doping scheme to uncover, in conjunction with a scanning tunnelling microscope tip-assist, a hidden equilibrium phase in a hole-doped bilayer of Sn on Si(111). This new phase is intrinsically phase separated into insulating domains with polar and nonpolar symmetries. Its formation involves a spontaneous symmetry breaking process that appears to be electronically driven, notwithstanding the lack of metallicity in this system. This modulation doping approach allows access to novel phases of matter, promising new avenues for exploring competing quantum matter phases on a silicon platform.

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