A W-hardened high-modulus ULK material is proposed for 45-nm-node Cdlow-k interconnects with homogeneous dielectric structures.An elastic modulus as high as 16 GPa was achieved for the ULK material with k=2.65. By combining this material with a n advanced dielectric barrier ( l~3 . 7 1 , interconnect test devices with 65-nm-node dimensions were fabricated.The UV-hardened high-modulus ULK material is shown to be effective in improving electrical performance while maintaining sufficient mechanical integrity.
The computer simulations of the time dependent dielectric breakdown (TDDB) percolation path are performed for ultrathin gate oxides. With our new percolation model, an interesting and new behavior of TDDB distribution was found. Weibull slope decreases monotonously with decreasing oxide thickness, and has a gap at an oxide thickness of approximately the effective defect size. This behavior can be understood well if we consider that an overlap of two neighboring defects becomes necessary to cause a sudden breakdown when oxide thickness exceeds the effective defect size. This phenomenon is very important because Weibull slope has a large effect on device reliability.
We present a methodology for capturing the intrinsic impact of both low-k dielectric stacks and packaging materials on the mechanical integrity of Cu/low-k interconnects. This drastically reduces the time and cost of sample fabrication and reliability tests and provides short-cycle feedback for both low-k and packaging materials development. Furthermore, this methodology is applicable for all types of packaging, from low-cost QFPs to high-performance Pb-free FCBGAs.
We propose for the first time, DNA functionalization on a single-crystal β-Ga 2 O 3 substrate and the detection of this surface modification through an electrolytically interfaced metal/Ga 2 O 3 diode. DNA stabilization on the oxide surface increases resistivity causing a reduction in the diode current. Good selectivity and sensitivity are also reported.
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