We have investigated the possibility of using tertiarybutylphosphine (TBP) for metalorganic chemical vapor deposition (MOCVD) of Al-containing materials through InAlGaP light-emitting diode (LED) fabrication. It has been shown that a marked decrease in the performance of InAlGaP LEDs results from Zn diffusion into the active layer. The diffusion of Zn in the In0.5(Al0.7Ga0.3)0.5P cladding layer can be enhanced by increasing interstitial group-III, I
I
I
I
. According to our growth model, an intrinsic disadvantage of TBP is that it decomposes at a temperature much lower than the substrate temperature and produces less-active phosphorus molecules ( P4). Since the vapor pressure of P4 is extremely high, it leads to lower effective V/III ratios on the growth surface and generation of I
I
I
I
. In order to increase the effective V/III ratio, we have proposed new organic phosphorus sources that are expected to provide a large number of PH
x
(x=0–2) radicals on the surface.
Metallic Mo/AI multilayers have been successfully fabricated by a magnetronradiofrequency sputtering system. The modulation wavelength ranged from 640 down to 15 A. Detailed structural properties were studied using x-ray and electron diffraction methods. These studies indicated that the films are polycrystalline with high structural order, BCC MO (1 10) and FCC AI (1 1 1) parallel to the films. Model calculations based on paracrystal theory were performed to analyse the x-ray diffraction patterns. In-plane resistivity was measured as a function of the modulation wavelength and temperature. The resistivity did not saturate even at very small wavelength and negative temperature gradients were usual below 60 A, where enhancements of the superconducting transition temperature were observed.
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