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Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth temperature as high as 1300° C was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks. By growing AlN at the high growth temperature, residual stress at the heterointerface was effectively reduced. The AlN epitaxial layers with smooth surfaces were grown using a low V/III ratio together with the high growth temperature. AlN/GaN/AlN double heterostructures with appropriate layer thicknesses for DH lasers and flat heterointerfaces were grown on sapphire substrates.

H-atom incorporation was studied for Mg-doped GaN grown by metalorganic chemical vapor deposition. H-atom incorporation was found to increase linearly with Mg concentration, suggesting the formation of simple complex between Mg and H atoms in GaN. Decrease of H-atom concentration was observed after thermal treatment in Ar, supporting the hypothesis that H-atom extraction plays an important role in obtaining low-resistivity p-type conduction.

Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition

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