Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication

Abstract

We have investigated the possibility of using tertiarybutylphosphine (TBP) for metalorganic chemical vapor deposition (MOCVD) of Al-containing materials through InAlGaP light-emitting diode (LED) fabrication. It has been shown that a marked decrease in the performance of InAlGaP LEDs results from Zn diffusion into the active layer. The diffusion of Zn in the In0.5(Al0.7Ga0.3)0.5P cladding layer can be enhanced by increasing interstitial group-III, I I I I . According to our growth model, an intrinsic disadvantage of TBP is that it decomposes at a temperature much lower than the substrate temperature and produces less-active phosphorus molecules ( P4). Since the vapor pressure of P4 is extremely high, it leads to lower effective V/III ratios on the growth surface and generation of I I I I . In order to increase the effective V/III ratio, we have proposed new organic phosphorus sources that are expected to provide a large number of PH x (x=0–2) radicals on the surface.

Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

“…By contrast at 650 1C, it falls to 9.071.0 Â 10 15 cm À3 . This latter figure is 10-100 times lower than that reported previously for the deposition of aluminum-containing alloys using either TBP or PH 3 [5][6][7][8][9][10][17][18][19][20][21][22]. Among these studies, Kondo et al [21] observed the lowest oxygen level in AlGaInP, equal to 2.0 Â 10 16 cm À3 .…”

“…One of the main obstacles to the use of TBP and TBAs has been the presence of oxygen impurities in AlInP and AlInGaP at levels equal to or above 10 17 cm À3 [5][6][7][8][9][10]. Nevertheless, recent advancements in precursor purification may have overcome these drawbacks, suggesting that it is worthwhile to reexamine these sources for III/V MOVPE.…”

650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

“…Using TBP, high-mobility InP and high-quality semiinsulating InP epilayers have been grown by MOCVD, [7][8][9] also high-quality InGaAsP quantum well long wavelength lasers grown by TBP and tertiarybutylarsine ͑TBAs͒ have been demonstrated. 10,11 However, when it comes to the case of AlGaInP material, although some research groups have used TBP as an alternative source to grow AlGaInP, [12][13][14][15][16] only AlGaInP red-light-emitting diodes have been realized. 15 So far, the attempts to grow AlGaInP red lasers have not been successful due to lower quality of AlGaInP epilayers.…”

Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures

“…The hazards involved have been a major concern in the MOCVD process. Thus, less toxic organic group-V MOCVD sources, such as tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), have been used to replace group-V hydride because of reduced hazards [5][6][7][8][9][10][11]. It has been shown that devices grown with TBAs and TBP have demonstrated state-of-the-art performances in InGaAsP and GaInAs/GaAs/GaInP lasers [7][8][9].…”

“…It has been shown that devices grown with TBAs and TBP have demonstrated state-of-the-art performances in InGaAsP and GaInAs/GaAs/GaInP lasers [7][8][9]. However, there have been few reports on high-quality AlGaInP/ GaInP quantum well structures grown by MOCVD with TBAs and TBP, which can be used for active layers of devices, such as light emitting diodes and LDs [10,11]. To date, only Itaya et al [10] have reported low-temperature (77 K) pulsed operation of AlGaInP/GaInP lasers grown by MOCVD with TBAs and TBP.…”