We investigated unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-µm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 µm wide and ~10 µm long, where the maximum length was 20 µm. Crystallization process was discussed from dependence of the laser fluence on the crystal states of Ge stripes as well as temperature simulations.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.