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The nitrogen-atom endohedral fullerene (N@C 60) with relatively higher purity [molar concentration ratio of N@C 60 to pristine fullerene (C 60)] has been synthesized by controlling plasma ion irradiation energy (E i) and C 60 behavior. We have examined the relationship between the synthesis purity of N@C 60 and E i which is controlled by changing the substrate bias voltages (V sub) and gas pressure (P N2) during the plasma irradiation process. It has been clarified that there is an optimum condition of the nitrogen plasma for the high-purity synthesis of N@C 60 , which consists of the high-density nitrogen-molecular ions (N 2 +) with suitable E i from 40 to 80 eV. In addition, control of C 60 behavior contributes to an increase in the reaction between C 60 and N 2 + to form N@C 60 , resulting in the synthesis of N@C 60 with the highest purity of 0.56 % in the world.

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