Hydrogen implantation and diffusion in silicon and silicon dioxide

Fink, D.; Krauser, J.; Nagengast, D.; Murphy, Tony; Erxmeier, J.; Palmetshofer, L.; Bräunig, D.; Weidinger, A.

doi:10.1007/bf01540112

Cited by 56 publications

(71 citation statements)

References 18 publications

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“…That indicates implanted hydrogen is trapped in the silicon lattice. This result is consistent with previous research on hydrogen-implanted silicon [124] and earlier infrared spectroscopy studies identified these hydrogen traps to be various implantation induced lattice defects. [35] The ERD spectrum of the annealed sample shows a partial out diffusion of hydrogen located in the shallower part of the H-depth distribution.…”

Section: H-depth Distribution Before and After The Ion-cutsupporting

confidence: 93%

“…The trapping of hydrogen at larger depths is consistent with previous research. [124] The data suggest that hydrogen at larger depths gets either trapped at the internal platelets or quickly diffuses into the vicinity of other atomic hydrogen due the large hydrogen concentration, forming slow moving H 2 molecules.…”

Section: H-depth Distribution Before and After The Ion-cutmentioning

confidence: 95%

“…This hypothesis is consistent with previous experiments. [124] Hence, the differences in surface blister formation are assumed to be caused by, among other things, the amount of short range diffusion which is required for the hydrogen atoms located near the blister depth to reach the closest H-bubble precursor.…”

Section: Blister Formation In the B+h Implanted Samples When The Boromentioning

confidence: 99%

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On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer

2001

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ZusammenfassungDer sogenannte "Ion-Cut", ein Schichtabspaltungsprozess mittels WasserstoffIonenimplantation und darauffolgender Probenerwärmung ist eine effektive, vielseitige und ökonomische Methode, um Siliziumschichten mit einer Dicke von nur einigen Nanometern von einem Siliziumsubstrat auf andere Materialien zu transferieren. Somit ermöglicht der Ion-Cut die Produktion von Siliziumschichen auf isolierenden Materalien ("silicon-on-insulator" (SOI) AbstractThe "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H 2 -gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

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Section: H-depth Distribution Before and After The Ion-cutsupporting

confidence: 93%

Section: H-depth Distribution Before and After The Ion-cutmentioning

confidence: 95%

Section: Blister Formation In the B+h Implanted Samples When The Boromentioning

confidence: 99%

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On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer

2001

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“…19 18 For the diffusion of H 2 , a value of $0.5 eV was reported by Fink et al 41 It is generally assumed that the hydrogenation of electronically active defects at the Si/SiO 2 interface is a reaction-limited process rather than diffusion-limited. 18,20,42 The activation energies that we have obtained are higher than the reported activation energies for hydrogen diffusion and, therefore, also suggest that the passivation kinetics of the stacks were not diffusionlimited.…”

Section: Activation Energymentioning

confidence: 97%

Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

Dingemans¹,

Einsele²,

Beyer³

et al. 2012

Journal of Applied Physics

142

131

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Annealing at moderate temperatures is required to activate the silicon surface passivation by Al2O3 thin films while also the thermal stability at higher temperatures is important when Al2O3 is implemented in solar cells with screenprinted metallization. In this paper, the relationship between the microstructure of the Al2O3 film, hydrogen diffusion, and defect passivation is explored in detail for a wide range of annealing temperatures. The chemical passivation was studied using stacks of thermally-grown SiO2 and Al2O3 synthesized by atomic layer deposition. Thermal effusion measurements of hydrogen and implanted He and Ne atoms were used to elucidate the role of hydrogen during annealing. We show that the passivation properties were strongly dependent on the annealing temperature and time and were significantly influenced by the Al2O3 microstructure. The latter was tailored by variation of the deposition temperature (Tdep = 50 °C–400 °C) with hydrogen concentration [H] between 1 and 13 at.% and mass density ρmass between 2.7 and 3.2 g/cm3. In contrast to films with intermediate material properties, the passivation by low- and high density films showed a reduced thermal stability at relatively high annealing temperatures (∼600 °C). These observations proved to be in good agreement with thermal effusion results of hydrogen and inert gas atoms that were also strongly dependent on film microstructure. We demonstrate that the temperature of maximum effusion decreased for films with progressively lower density (i.e., with increasing [H]). Therefore, the reduced thermal stability of the passivation for low-density hydrogen-rich ([H] >∼5 at. %) films can be attributed to a loss of hydrogen at relatively low annealing temperatures. In contrast, the lower initial [H] for dense Al2O3 films can likely explain the lower thermal stability associated with these films. The effusion measurements also allowed us to discuss the role of molecular- and atomic hydrogen during annealing.

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“…Also, the passivation layer should be reactive to the change of fluid pH in order to induce generation of accumulation/depletion layer of mobile charge carriers. The roles of passivation layers for electrical insulation, ion-diffusion barrier, and sensing membranes to target chemical species are significant and thus have been numerously discussed in ISFET (Ion Sensitive Field Effect Transistor)-based pH sensors [18][19][20][21][22][23][24][25][26]. However, previous works on SiNW pH sensors have provided only brief accounts for forming thin oxidepassivation layer by oxygen plasma [7] or short-term thermal oxidation [3][4][5]9] without systematic studies of the effect of the materials and thickness on passivation layers.…”

Section: Operating Principle Of Silicon Nanowire-based Ph Sensorsmentioning

confidence: 99%

Quantitative studies of long-term stable, top-down fabricated silicon nanowire pH sensors

et al. 2012

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We report a simple and effective method to develop long-term stable, top-down fabricated silicon nanowire (SiNW) pH sensors along with systematic studies on the performance of the sensors. In this work, we fabricated the SiNW pH sensors based on top-down fabrication processes. In order to improve the stability of the sensor performance, the sensors were coated with a passivation layer (PECVD-based silicon nitride) for effective electrical insulation and ion-blocking. The stability, pH sensitivity, and repeatability of the sensor response are critically analyzed with regard to the physics of sensing interface between sample liquid and the sensor surface. Also, trade-off between the stability and pH sensitivity of the sensor response is discussed.

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Hydrogen implantation and diffusion in silicon and silicon dioxide

Cited by 56 publications

References 18 publications

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

Quantitative studies of long-term stable, top-down fabricated silicon nanowire pH sensors

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