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Neuromorphic hardware implementation of Boltzmann Machine using a network of stochastic neurons can allow non-deterministic polynomial-time (NP) hard combinatorial optimization problems to be efficiently solved. Efficient implementation of such Boltzmann Machine with simulated annealing desires the statistical parameters of the stochastic neurons to be dynamically tunable, however, there has been limited research on stochastic semiconductor devices with controllable statistical distributions. Here, we demonstrate a reconfigurable tin oxide (SnOx)/molybdenum disulfide (MoS2) heterogeneous memristive device that can realize tunable stochastic dynamics in its output sampling characteristics. The device can sample exponential-class sigmoidal distributions analogous to the Fermi-Dirac distribution of physical systems with quantitatively defined tunable “temperature” effect. A BM composed of these tunable stochastic neuron devices, which can enable simulated annealing with designed “cooling” strategies, is conducted to solve the MAX-SAT, a representative in NP-hard combinatorial optimization problems. Quantitative insights into the effect of different “cooling” strategies on improving the BM optimization process efficiency are also provided.

Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k · p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

Artificial neuronal devices that functionally resemble biological neurons are important toward realizing advanced brain emulation and for building bioinspired electronic systems. In this Communication, the stochastic behaviors of a neuronal oscillator based on the charge-density-wave (CDW) phase transition of a 1T-TaS2 thin film are reported, and the capability of this neuronal oscillator to generate spike trains with statistical features closely matching those of biological neurons is demonstrated. The stochastic behaviors of the neuronal device result from the melt-quench-induced reconfiguration of CDW domains during each oscillation cycle. Owing to the stochasticity, numerous key features of the Hodgkin-Huxley description of neurons can be realized in this compact two-terminal neuronal oscillator. A statistical analysis of the spike train generated by the artificial neuron indicates that it resembles the neurons in the superior olivary complex of a mammalian nervous system, in terms of its interspike interval distribution, the time-correlation of spiking behavior, and its response to acoustic stimuli.

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The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of x2.9 BTBT in the < 112 > direction, as compared with Si < 110 > / (100) due to a small band gap. In addition, the high ON/OFF current ratio, with an ON current similar to 1 mu A/mu m and an OFF current similar to 10 pA/mu m, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass

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