By eliminating metal contamination caused by sputtering events occurring behind the wafer as well as in front of the wafer, we have successfully formed ultrashallow, low-reverse-bias-current n+p junctions by postimplantation annealing conducted at a temperature as low as 450~ Further, we propose that the increased leakage current still present in the absence of metallic contamination is due to the residual damage which is the ion-implantation generated point defects widely distributed in the bulk of silicon. Effects of each point defect becomes more pronounced as the annealing temperature is reduced.
Arsenic-implanted self-aligned Al-gate MOSFETs have been successfully fabricated by employing ultra-clean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of the high-energy-beam-induced metal sputter contamination have enabled us to form low-leakage pn junctions by fumace arurealing at a temperature as low as 450"C. The fabricated Al-gate MOSFETs have exhibited good electrical characteristics, thus demonstratiDg a large poteDtial for application to realizing ultra-high-speed integrated circuits. 1. Introducfion and drain junctions self-aligned to the aluminum gate,
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