We report on the anisotropic optical properties of single-crystal tin monosulfide (SnS). The components e a , e b , and e c of the pseudodielectric-function tensor hei ¼ he 1 i þ ihe 2 i spectra are taken from 0.73 to 6.45 eV by spectroscopic ellipsometry. The measured hei spectra are in a good agreement with the results of the calculated dielectric response from hybrid density functional theory. The hei spectra show the direct band-gap onset and a total of eight above-band-gap optical structures that are associated with the interband-transition critical points (CPs). We obtain accurate CP energies by fitting analytic CP expressions to second-energy-derivatives of the hei data. Their probable electronic origins and implications for photovoltaic applications are discussed. V C 2014 AIP Publishing LLC. [http://dx.

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SnS is a promising candidate as PV absorber material according to the material properties and the Loferski diagram, but despite the numerous publications on this material, the intrinsic material properties are widely unknown and the theoretical possible values for efficiency are still far away from those achieved in reality. Due to the fact that this material is mostly grown as thin film material, bulk research is rare. The material synthesis and the melt growth of tin monosulfide (SnS) by using Bridgman‐Stockbarger technique have been investigated in this study. After first growth experiments produced polycrystalline SnS, a significant reduction of the growth velocity lead to samples with a high amount of single crystalline material. These samples were investigated in detail regarding the structural and optical properties by using XRD/HRXRD, chemical etching and photoluminescence.

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