Synthesis and single crystal growth of SnS by the Bridgman‐Stockbarger technique

Sorgenfrei, Tina; Hofherr, F.; Jauß, Thomas; Cröll, A.

doi:10.1002/crat.201200484

Cited by 18 publications

(9 citation statements)

References 21 publications

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“…Besides, another weaker energy peak located at ≈700 nm may correspond to the energy of the direct transition of SnS nanoplates. The result is consistent with the previous report . All the characterizations mentioned above clearly demonstrated the purity and high‐quality of as‐synthesized SnS nanoplates.…”

Section: Resultssupporting

confidence: 92%

Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Wei

et al. 2018

Adv Elect Materials

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Layered 2D semiconductor such as graphene and transitionmetal dichalcogenide (TMDs) has become intriguing building blocks during the past few years for their great performance in electronic and optoelectronic application. [1][2][3][4][5][6] Graphene has been widely studied by researchers very early for its outstanding performance such as ultrahigh carrier mobility, great thermal conductivity, and ultrahigh photoelectric response in wide range. [7] However, the intrinsic gapless bond structure of Layered 2D semiconductors, such as graphene and transition-metal dichalcogenides (TMDs), are receiving intensive attention owing to their great performance in electronic and optoelectronic application during the past few years. Among them, SnS has similar anisotropy to black phosphorus and high photoresponse in the near infrared range, rendering it as an ideal candidate for infrared photodetectors. In this work, large-size (up to 330 µm) and high-quality single-crystalline SnS nanoplates are synthesized successfully via controlled chemical vapor deposition technique and characterized by field-emission scanning electron microscopy, X-ray diffraction, confocal Raman system, atomic force microscope, transmission electron microscopy, and photoluminescence spectroscopy. Photodetectors based on as-grown SnS nanoplates are fabricated with back-gated field effect transistors (FETs) configuration, exhibiting a high mobility of 17.1 cm 2 V −1 s −1 . Photodetectors based on the SnS FETs demonstrate excellent optoelectronic performance both in visible and near-infrared spectral range. Typically, photoresponsivity of 197.7 A W −1 , photoresponse time of 39 ms, and external quantum efficiency of 6.06 × 10 4 % are exhibited under the irradiation of 405 nm laser. The wide response range and ultrahigh sensitivity make the large-area single crystal

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Section: Resultssupporting

confidence: 92%

Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Wei

et al. 2018

Adv Elect Materials

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“…For all samples we estimated carrier lifetimes by fitting time-resolved photoluminescence (TRPL) measurements with biexponential decay functions. Photoluminescence (PL) spectra (Figure 2c) were analyzed to inform optical filter choices for TRPL measurements; spectra for all samples showed dominant emission at 1.3 and 1.78 eV, in agreement with previous optical transition levels reported in the literature [29][30][31] . A higher-energy shoulder was also seen just above 2 eV, and was particularly pronounced in the sulfur-poor samples.…”

supporting

confidence: 81%

Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

Polizzotti

Faghaninia

Poindexter

et al. 2017

J. Phys. Chem. Lett.

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Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10% device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.

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“…193,194 Nonetheless, the abundance of tin and sulphur, combined with the ease of materials processing and a maximum predicted efficiency of 32% (as per the Shockley-Queisser limit), 195 make SnS attractive as a candidate photovoltaic absorber. SnS possesses an indirect fundamental band gap of 1.1 eV, [196][197][198] however, its optical absorption (onset at B1.3 eV) remains high due to its slightly larger direct band gap of 1.2-1.5 eV, suggesting that the indirect gap is not detrimental to performance. 192,[199][200][201] SnS is intrinsically p-type, with low hole effective masses (m h * = 0.2 m 0 in the a and b directions; m h * = m 0 along c) and is generally employed in a p-n junction architecture using ZnO or CdO as the n-type layer.…”

Section: Tin(ii) Chalcogenidesmentioning

confidence: 99%

Beyond methylammonium lead iodide: prospects for the emergent field of ns²containing solar absorbers

2017

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The field of photovoltaics is undergoing a surge of interest following the recent discovery of the lead hybrid perovskites as a remarkably efficient class of solar absorber. Of these, methylammonium lead iodide (MAPI) has garnered significant attention due to its record breaking efficiencies, however, there are growing concerns surrounding its long-term stability. Many of the excellent properties seen in hybrid perovskites are thought to derive from the 6s electronic configuration of lead, a configuration seen in a range of post-transition metal compounds. In this review we look beyond MAPI to other ns solar absorbers, with the aim of identifying those materials likely to achieve high efficiencies. The ideal properties essential to produce highly efficient solar cells are discussed and used as a framework to assess the broad range of compounds this field encompasses. Bringing together the lessons learned from this wide-ranging collection of materials will be essential as attention turns toward producing the next generation of solar absorbers.

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Synthesis and single crystal growth of SnS by the Bridgman‐Stockbarger technique

Cited by 18 publications

References 21 publications

Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

Beyond methylammonium lead iodide: prospects for the emergent field of ns²containing solar absorbers

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Synthesis and single crystal growth of SnS by the Bridgman‐Stockbarger technique

Cited by 18 publications

References 21 publications

Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

Beyond methylammonium lead iodide: prospects for the emergent field of ns2containing solar absorbers

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Beyond methylammonium lead iodide: prospects for the emergent field of ns²containing solar absorbers