Synthesis of Submillimeter‐Scale Single Crystal Stannous Sulfide Nanoplates for Visible and Near‐Infrared Photodetectors with Ultrahigh Responsivity

Abstract

Layered 2D semiconductor such as graphene and transitionmetal dichalcogenide (TMDs) has become intriguing building blocks during the past few years for their great performance in electronic and optoelectronic application. [1][2][3][4][5][6] Graphene has been widely studied by researchers very early for its outstanding performance such as ultrahigh carrier mobility, great thermal conductivity, and ultrahigh photoelectric response in wide range. [7] However, the intrinsic gapless bond structure of Layered 2D semiconductors, such as graphene and transition-metal dichalcogenides (TMDs), are receiving intensive attention owing to their great performance in electronic and optoelectronic application during the past few years. Among them, SnS has similar anisotropy to black phosphorus and high photoresponse in the near infrared range, rendering it as an ideal candidate for infrared photodetectors. In this work, large-size (up to 330 µm) and high-quality single-crystalline SnS nanoplates are synthesized successfully via controlled chemical vapor deposition technique and characterized by field-emission scanning electron microscopy, X-ray diffraction, confocal Raman system, atomic force microscope, transmission electron microscopy, and photoluminescence spectroscopy. Photodetectors based on as-grown SnS nanoplates are fabricated with back-gated field effect transistors (FETs) configuration, exhibiting a high mobility of 17.1 cm 2 V −1 s −1 . Photodetectors based on the SnS FETs demonstrate excellent optoelectronic performance both in visible and near-infrared spectral range. Typically, photoresponsivity of 197.7 A W −1 , photoresponse time of 39 ms, and external quantum efficiency of 6.06 × 10 4 % are exhibited under the irradiation of 405 nm laser. The wide response range and ultrahigh sensitivity make the large-area single crystal

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

“…The highest I p appears for illumination with 365 nm ultraviolet light when measuring the wavelength dependence of the 25 ML SnS photodetector. The performance of the 2D SnS photodetectors studied in this work as well as the recently reported performance of other 2D SnS‐based photodetectors are summarized in Table S2, Supporting Information 54,55,62–66. We notice our 2D SnS photodetectors all work under extremely low illumination power density (down to 40 µW cm −2 ) and exhibit response over a broad wavelength range with large D * values.…”

Ultrathin tin monosulfide nanosheets with the exposed (001) plane for efficient electrocatalytic conversion of CO2 into formate

“…S3 †) of ultrathin SnS NSs exhibits two typical peaks located at 93 and224 cm À1 , corresponding to the Ag modes of the orthorhombic SnS phase. 30,31 An obvious decrease in the peak intensity of the Raman spectrum and a blue shi of the Ag band located at 224 cm À1 are observed for ultrathin SnS NSs as compared with bulk SnS, demonstrating the reduced numbers of SnS layers aer electrochemical exfoliation. 20,27,28 The efficient exfoliation of bulk SnS was further supported by the X-ray diffraction (XRD) patterns, in which the diffraction peaks of ultrathin SnS NSs are broader and weaker than those of the bulk SnS (Fig.…”

2D Metal Chalcogenides for IR Photodetection

“…2D group IVA metal chalcogenides are a growing interest in IR photodetection, including GeSe, SnS, SnS 2 , SnSe 2 , and PbS due to their unique crystal structures and electronic structures. GeSe possesses a high anisotropic crystal structure, thus inducing anisotropic optical absorption .…”