The feasibility of measuring overlay using small targets has been demonstrated in an earlier paper 1 . If the target is small ("smallness" being relative to the resolution of the imaging tool) then only the symmetry of its image changes with overlay offset. For our purposes the targets must be less than 5µm across, but ideally much smaller, so that they can be positioned within the active areas of real devices. These targets allow overlay variation to be tested in ways that are not possible using larger conventional target designs. In this paper we describe continued development of this technology.In our previous experimental work the targets were limited to relatively large sizes (3x3µm) by the available process tools. In this paper we report experimental results from smaller targets (down to 1x1µm) fabricated using an e-beam writer.We compare experimental results for the change of image asymmetry of these targets with overlay offset and with modeled simulations. The image of the targets depends on film properties and their design should be optimized to provide the maximum variation of image symmetry with overlay offset. Implementation of this technology on product wafers will be simplified by using an image model to optimize the target design for specific process layers. Our results show the necessary good agreement between experimental data and the model.The determination of asymmetry from the images of targets as small as 1µm allows the measurement of overlay with total measurement uncertainty as low as 2nm.
Overlay metrology is a very demanding image processing application; current applications are achieving dynamic precision of one hundredth of a pixel or better. As such it requires an accurate image acquisition system, with minimal distortions. Distortions can be physical (e.g. pixel size / shape) or electronic (e.g. clock skew) in nature. They can also affect the image shape, or the gray level intensity of individual pixels, the former causing severe problems to pattern recognition and measurement algorithms, the latter having an adverse effect primarily on the measurement itself.This paper considers the artifacts that are present in a particular analogue camera, with a discussion on how these artifacts translate into a reduction of overlay metrology performance, in particular their effect on precision and tool induced shift (TIS). The observed effects include, but are not limited to, banding and interlacing.This camera is then compared to two digital cameras. The first of these operates at the same frame rate as the analogue camera, and is found to have fewer distortions than the analogue camera. The second camera operates with a frame rate twice that of the other two. It is observed that this camera does not exhibit the distortions of the analogue camera, but instead has some very specific problems, particularly with regards to noise.The quantitative data on the effect on precision and TIS under a wide variety of conditions, is presented. These show that while it is possible to achieve metrology-capable images using an analogue camera, it is preferable to use a digital camera, both from the perspective of overall system performance, and overall system complexity.
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