A novel architecture and proprietary electrically addressable inks have been developed to provide disruptive, print-like full color reflective digital media solutions based on an electrokinetic technology platform. The thin, flexible, low-power, reflective electronic media is fabricated with a new roll-to-roll manufacturing platform. Here we demonstrate the integration of this media with multi-component oxide (MCO) thin-film transistor (TFT) backplane for an active matrix reflective electronic display.
We report on the development of low‐temperature gate dielectric materials for zinc indium oxide (ZIO) thin‐film transistors (TFTs). Several films, including ALD HfO2 and PECVD SiNx (deposited at 175°C and 150°C, respectively), yield good TFT performance. Bias stress‐induced threshold shift for HfO2 is quite small, however does not follow conventional trends associated with hydrogenated amorphous Si (a‐Si:H) TFTs; PECVD SiNx conversely, shows bias stress characteristics that conform reasonably to a model appropriate for a‐Si:H devices.
Zinc tin oxide (ZTO) thin‐film transistors (TFTs) provide attractive performance and are suitable for low‐temperature processes compatible with flexible “plastic” substrates. We report our progress in integrating ZTO into our SAIL process to produce high‐performance TFT on flexible substrates.
Results of an investigation of bias stress metastability of multicomponent, zinc-indium and zinc-tin oxides, transistors are investigated. The bias stress as a function of various dielectrics, passivation layers, and illumination conditions indicate that for negative gate bias stressing defects often are created in the semiconductor, probably near or at the surface, particularly if the devices are unpassivated. Oxygen vacancy formation is a likely candidate. For many dielectrics, the positive gate bias metastability appears to be dominated by charge trapping within the insulator. For zinc-tin oxide devices, the kinetics of the metastability follows a stretched exponential behavior with a power law dependence on gate voltage. Correcting for the observed Meyer-Neldel behavior, the activation energy of t is about 1.2 eV for defect generation and the disorder energy from b is about 0.06 eV. By using passivation, the best gate dielectrics and annealing protocols, we have reduced the bias stress metastability to about 0.1 V for a 25,000 s stress at 22 8C.
Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi0.7Dy0.3FeO3 shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi0.7Dy0.3FeO3, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a “blueprint” for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or “target” B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.
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