A flexible ferroelectric memory element based on oxide heteroepitaxy has been demonstrated with superior performance.
Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric-ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this study, we investigated the magnetoelectric coupling in a self-assembled BiFeO (BFO)-CoFeO (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO-CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.
Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, lightweight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80 % in visible light and high performance with a ON/OFF resistance ratio >10 5 , stable endurance to 10 3 cycles and long retention time of 10 5 s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 o C, which deliver a pathway for future applications in flexible transparent smart electronics.
Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications. In order to introduce spintronics into the realm of flexible devices, we demonstrate that it is feasible to grow epitaxial FeO film, a promising candidate for realizing spintronic devices based on tunneling magnetoresistance, on flexible muscovite. In this study, the heteroepitaxy of FeO/muscovite is characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. The chemical composition and magnetic feature are investigated by a combination of X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. The electrical and magnetic properties are examined to show the preservation of the primitive properties of FeO. Furthermore, various bending tests are performed to show the tunability of functionalities and to confirm that the heterostructures retain the physical properties under repeated cycles. These results illustrate that the FeO/muscovite heterostructure can be a potential candidate for the applications in flexible spintronics.
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